Operating Temperature Range .........................-40°C to +125°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
, output power is referenced to 50Ω, V
DD
= 2.1V to 3.6V, V
ENABLE
= V
DD
, T
A
= -40°C to +125°C, unless
otherwise noted. Typical values are at V
DD
= 2.7V, T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER
SYSTEM PERFORMANCE
Supply Voltage
V
DD
V
ENABLE
= V
DD
(Note 2)
f
RF
= 315MHz
V
ENABLE
= V
DD
,
V
DATA
= V
DD
V
ENABLE
= V
DD
,
V
DATA
= 0V
V
ENABLE
= V
DD
(Note 2)
f
RF
= 433MHz
V
ENABLE
= V
DD
,
V
DATA
= V
DD
V
ENABLE
= V
DD
,
V
DATA
= 0V
Standby Current
Frequency Range
Data Rate
Modulation Depth
Output Power
P
OUT
I
STDBY
f
RF
V
ENABLE
< V
IL
, T
A
< +85°C (Note 3)
V
ENABLE
< V
IL
T
A
< +125°C (Note 3)
(Note 1)
(Note 3)
ON to OFF P
OUT
ratio (Note 4)
T
A
= +25°C, V
DD
= 2.7V (Notes 5, 6)
T
A
= +125°C, V
DD
= 2.1V (Notes 5, 6)
T
A
= -40°C, V
DD
= 3.6V (Notes 5, 6)
Turn-On Time
Transmit Efficiency with CW
Transmit Efficiency at 50%
Duty Cycle
t
ON
To f
OFFSET
< 50kHz (Note 7)
To f
OFFSET
< 5kHz (Note 7)
f
RF
= 315MHz (Note 8)
f
RF
= 433MHz (Note 8)
f
RF
= 315MHz (Note 9)
f
RF
= 433MHz (Note 9)
7.3
3.3
300
0
90
10.3
6.0
13.7
220
450
43.6
41.3
37.6
35.1
16.2
µs
%
%
12.8
dBm
2.1
5.3
9.1
1.5
5.7
9.6
1.7
5
2.7
350
1.7
450
100
nA
µA
MHz
kbps
dB
3.6
9.4
16.6
2.3
mA
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Current
I
DD
2
300MHz-to-450MHz Low-Power,
Crystal-Based ASK Transmitter
ELECTRICAL CHARACTERISTICS (continued)
(
Typical Application Circuit
, output power is referenced to 50Ω, V
DD
= 2.1V to 3.6V, V
ENABLE
= V
DD
, T
A
= -40°C to +125°C, unless
otherwise noted. Typical values are at V
DD
= 2.7V, T
A
= +25°C, unless otherwise noted.) (Note 1)
PARAMETER
VCO Gain
f
RF
= 315MHz
Phase Noise
f
RF
= 433MHz
Maximum Carrier Harmonics
Reference Spur
Loop Bandwidth
Crystal Frequency
Oscillator Input Capacitance
Frequency Pushing by V
DD
DIGITAL INPUTS
Data Input High
Data Input Low
Maximum Input Current
Pulldown Current
V
IH
V
IL
2
25
V
DD
- 0.25
0.25
V
V
nA
µA
f
XTAL
From each XTAL pin to GND
f
RF
= 315MHz
f
RF
= 433MHz
f
RF
= 315MHz
f
RF
= 433MHz
f
OFFSET
=100kHz
f
OFFSET
= 1MHz
f
OFFSET
=100kHz
f
OFFSET
= 1MHz
SYMBOL
CONDITIONS
MIN
TYP
330
-84
-91
-82
-89
-50
-50
-75
-81
1.6
f
RF
/ 32
6.2
3
dBc
dBc
MHz
MHz
pF
ppm/V
dBc/Hz
MAX
UNITS
MHz/V
MAX1472
PHASE-LOCKED LOOP PERFORMANCE
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
100% tested at T
A
= +25°C. Guaranteed by design and characterization over temperature.
50% duty cycle at 10kHz data.
Guaranteed by design and characterization, not production tested.
Generally limited by PC board layout.
Output power can be adjusted with external resistor.
Guaranteed by design and characterization at f
RF
= 315MHz.
V
ENABLE
< V
IL
to V
ENABLE
> V
IH
. f
OFFSET
is defined as the frequency deviation from the desired carrier frequency.
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