SO (derate 8.3 mW/°C above +70°C) ......................666.7mW
Operating Temperature Range ........................ -40°C to +125NC
Junction Temperature .....................................................+150NC
Storage Temperature Range............................ -65°C to +150NC
Lead Temperature (soldering, 10s) .............................. +300NC
Soldering Temperature (reflow) .................................... +260NC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACkAGE THERMAL CHARACTERISTICS (Note 1)
5-Pin SOT23
Junction-to-Ambient Thermal Resistance (Θ
JA
) .... 324.3°C/W
Junction-to-Case Thermal Resistance (Θ
JC
) ...............82°C/W
8-Pin SOT23
Junction-to-Ambient Thermal Resistance (Θ
JA
) ....... 196°C/W
Junction-to-Case Thermal Resistance (Θ
JC
) ...............70°C/W
µMAX
Junction-to-Ambient Thermal Resistance (Θ
JA
) ........221°C/W
Junction-to-Case Thermal Resistance (Θ
JC
) ...............42°C/W
SO
Junction-to-Ambient Thermal Resistance (Θ
JA
) ........120°C/W
Junction-to-Case Thermal Resistance (Θ
JC
) ...............37°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
DD
= 10V,
V
SS
= 0V, V
IN+
= V
IN-
= V
DD
/2, R
L
= 10kI to V
DD
/2, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are
at T
A
= +25°C.) (Note 2)
PARAMETER
POWER SuPPLY
Supply Voltage Range
Power-Supply Rejection Ratio
(Note 3)
Quiescent Current per Amplifier
(MAX44250)
Quiescent Current per Amplifier
(MAX44251/MAX44252)
Power-Up Time
DC SPECIFICATIONS
Input Common-Mode Range
Common-Mode Rejection Ratio
(Note 3)
Input Offset Voltage
(MAX44250) (Note 3)
Maxim Integrated
SYMBOL
V
DD
PSRR
I
DD
I
DD
t
ON
CONDITIONS
Guaranteed by PSRR
V
DD
= 2.7V to 20V, V
CM
= 0V
R
L
=
J
R
L
=
J
T
A
= +25NC
-40NC < T
A
< +125NC
T
A
= +25NC
-40NC < T
A
< +125NC
MIN
2.7
140
TYP
MAX
20
uNITS
V
dB
145
1.22
1.15
25
1.7
1.85
1.55
1.75
mA
mA
Fs
V
CM
CMRR
Guaranteed by CMRR test
T
A
= +25NC, V
CM
= -0.05V to (V
DD
-
1.5V)
-40NC < T
A
< +125NC
V
SS
-
0.05
133
130
3
140
V
DD
-
1.5
V
dB
V
OS
T
A
= +25NC
9
FV
2
MAX44250/MAX44251/MAX44252
20V, Ultra-Precision, Low-Noise Op Amps
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 10V,
V
SS
= 0V, V
IN+
= V
IN-
= V
DD
/2, R
L
= 10kI to V
DD
/2, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are
at T
A
= +25°C.) (Note 2)
PARAMETER
Input Offset Voltage (MAX44251/
MAX44252)(Note 3)
Input Offset Voltage Drift
(MAX44250) (Note 3)
Input Offset Voltage Drift
(MAX44251/MAX44252)(Note 3)
Input Bias Current (MAX44250)
(Note 3)
Input Bias Current (MAX44251/
MAX44252)(Note 3)
Input Offset Current (Note 3)
SYMBOL
V
OS
TC V
OS
TC V
OS
I
B
I
B
I
OS
A
VOL
250mV
P
V
OUT
P
V
DD
- 250mV,
R
L
= 10kI to
V
DD
/2
To V
DD
or V
SS
V
OL
V
OL
V
OH
V
OH
V
OUT
- V
SS
V
OUT
- V
SS
V
DD
- V
OUT
V
DD
- V
OUT
T
A
= +25NC
-40NC < T
A
<
+125NC
Noncontinuous
R
L
= 10kI to V
DD
/2
R
L
= 2kI to V
DD
/2
R
L
= 10kI to V
DD
/2
R
L
= 2kI to V
DD
/2
R
L
= 10kI to V
DD
/2
R
L
= 2kI to V
DD
/2
R
L
= 10kI to V
DD
/2
R
L
= 2kI to V
DD
/2
145
136
96
12
45
12
45
18
71
18
71
5.9
123
0.6
2
10
C
L
= 20pF
A
V
= 1V/V, V
OUT
= 2V
P-P
No sustained oscillation, A
V
= 1V/V
V
OUT
= 2V
P-P
,
f = 1kHz
A
V
= +1V/V,
R
L
= 10kI to
f = 20kHz
V
DD
/2
To 0.01%, V
OUT
= 2V step, A
V
= -1V/V
60
8
500
-124
-119
400
dB
ns
3
CONDITIONS
T
A
= +25NC
-40NC < T
A
< +125NC
MIN
TYP
3
MAX
6
7
uNITS
FV
nV/NC
nV/NC
pA
pA
pA
5
5
T
A
= +25NC
T
A
= +25NC
-40NC < T
A
< +125NC
400
154
200
200
26
19
1400
1300
2400
Open-Loop Gain (Note 3)
dB
Output Short-Circuit Current
Output Voltage Low
(MAX44250)
Output Voltage Low
(MAX44251/MAX44252)
Output Voltage High
(MAX44250)
Output Voltage High
(MAX44251/MAX44252)
AC SPECIFICATIONS
Input Voltage-Noise Density
Input Voltage Noise
Input Current-Noise Density
Input Capacitance
Gain-Bandwidth Product
Phase Margin
Slew Rate
Capacitive Loading
Total Harmonic Distortion
Settling Time
Maxim Integrated
mA
26
92
25
85
40
148
37
135
mV
mV
mV
mV
e
N
i
N
C
IN
GBW
PM
SR
C
L
THD
f = 1kHz
0.1Hz < f < 10Hz
f = 1kHz
nV/√Hz
nV
P-P
pA/√Hz
pF
MHz
Degrees
V/Fs
pF
MAX44250/MAX44251/MAX44252
20V, Ultra-Precision, Low-Noise Op Amps
ELECTRICAL CHARACTERISTICS
(V
DD
= 3.3V,
V
SS
= 0V, V
IN+
= V
IN-
= V
DD
/2, R
L
= 10kI to V
DD
/2, T
A
= -40°C to +125°C, unless otherwise noted. Typical values
are at T
A
= +25°C.) (Note 2)
PARAMETER
POWER SuPPLY
Quiescent Current Per Amplifier
(MAX44250)
Quiescent Current Per Amplifier
(MAX44251/MAX44252))
Power-Up Time
DC SPECIFICATIONS
Input Common-Mode Range
Common-Mode Rejection Ratio
(Note 3)
Input Offset Voltage
(MAX44250)(Note 3)
Input Offset Voltage (MAX44251/
MAX44252)(Note 3)
Input Offset Voltage Drift
(MAX44250)(Note 3)
Input Offset Voltage Drift
(MAX44251/MAX44252)(Note 3)
Input Bias Current
(MAX44250)(Note 3)
Input Bias Current (MAX44251/
MAX44252)(Note 3)
Input Offset Current (Note 3)
V
CM
CMRR
Guaranteed by CMRR test
T
A
= +25NC, V
CM
= -0.05V to (V
DD
-
1.5V)
-40NC < T
A
< +125NC
V
OS
V
OS
TC V
OS
TC V
OS
I
B
I
B
I
OS
A
VOL
250mV
P
V
OUT
P
V
DD
- 250mV,
R
L
= 10kI to
V
DD
/2
To V
DD
or V
SS
V
OL
V
OL
V
OH
V
OUT
- V
SS
V
OUT
- V
SS
V
DD
- V
OUT
T
A
= +25NC
-40NC < T
A
< +125NC
Noncontinuous
R
L
= 10kI to V
DD
/2
R
L
= 2kI to V
DD
/2
R
L
= 10kI to V
DD
/2
R
L
= 2kI to V
DD
/2
R
L
= 10kI to V
DD
/2
R
L
= 2kI to V
DD
/2
136
133
58
5
17
5
17
9
29
26
46
22
42
22
52
mA
mV
mV
mV
T
A
= +25NC
-40NC < T
A
< +125NC
400
151
dB
T
A
= +25NC
-40NC < T
A
< +125NC
8
8
200
200
V
SS
-
0.05
120
117
3
3
8.5
5.5
6.5
25
18
1450
1100
1200
FV
FV
nV/NC
nV/NC
pA
pA
pA
129
V
DD
-
1.5
V
I
DD
I
DD
t
ON
R
L
=
J
R
L
=
J
T
A
= +25NC
-40NC < T
A
< +125NC
T
A
= +25NC
-40NC < T
A
< +125NC
25
1.1
1.17
1.65
1.80
1.5
1.65
mA
mA
Fs
SYMBOL
CONDITIONS
MIN
TYP
MAX
uNITS
dB
Open-Loop Gain (Note 3)
Output Short-Circuit Current
Output Voltage Low
(MAX44250)
Output Voltage Low
(MAX44251/MAX44252)
Output Voltage High
Maxim Integrated
4
MAX44250/MAX44251/MAX44252
20V, Ultra-Precision, Low-Noise Op Amps
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 3.3V,
V
SS
= 0V, V
IN+
= V
IN-
= V
DD
/2, R
L
= 10kI to V
DD
/2, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are
at T
A
= +25°C.) (Note 2)
PARAMETER
AC SPECIFICATIONS
Input Voltage-Noise Density
Input Voltage Noise
Input Current-Noise Density
Input Capacitance
Gain-Bandwidth Product
Phase Margin
Slew Rate
Capacitive Loading
i
N
C
IN
GBW
PM
SR
C
L
C
L
= 20pF
A
V
= 1V/V, V
OUT
= 1V
P-P
, 10% to 90%
No sustained oscillation, A
V
= 1V/V
V
OUT
= 1V
P-P
,
A
V
= +1V/V,
V
CM
= V
DD
/4,
R
L
= 10kI to
V
DD
/2
f = 1kHz
e
N
f = 1kHz
0.1Hz < f < 10Hz
f = 1kHz
6.2
123
0.3
2
10
60
5
500
-124
dB
f = 20kHz
-100
200
ns
nV/√Hz
nV
P-P
pA/√Hz
pF
MHz
Degrees
V/Fs
pF
SYMBOL
CONDITIONS
MIN
TYP
MAX
uNITS
Total Harmonic Distortion
THD
Settling Time
To 0.01%, V
OUT
= 1V step, A
V
= -1V/V
Note 2:
All devices are 100% production tested at T
A
= +25°C. Temperature limits are guaranteed by design.
I have never written a program for HT1621. Recently, I read some information that said the write command is composed of 101+6-bit address+4-bit data. The 6-bit address is the SEG bit, what does the 4-...
1. Memory ModelThe C6000 compiler treats the entire storage area as a single linear storage block and allocates it into code area and data area. The code and data generated by a C program are placed i...
[font=SimSun][size=10.5pt]About two years later, [/size][/font][font="][size=10.5pt]TI[/size][/font][font=SimSun][size=10.5pt] launched its new generation [/size][/font][font="][size=10.5pt] OMAP[/siz...
[i=s]This post was last edited by dql2016 on 2022-9-21 17:00[/i]Espressif's official website provides support for Arduinohttps://docs.espressif.com/projects/arduino-esp32/en/latest/installing.htmlThe ...
I never knew there was such a magical forum. I have always been interested in electronics and am currently working on instrumentation. I hope everyone will take care of me in the future....
With the booming electronics industry, vision systems have become a leader in the electronics automation sector. However, the delicate nature of electronic products often affects product yields due...[Details]
Nios II is a configurable 16-/32-bit RISC processor. Combined with a rich set of peripheral-specific instructions and hardware acceleration units, it provides a highly flexible and powerful SOPC sy...[Details]
On August 24th, media outlets reported, citing sources, that NavInfo, a listed company on the A-share market, is nearing completion in its acquisition of the intelligent driving c...[Details]
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[Details]
Zos Automotive Research Institute released the "2025
Smart Cockpit
Tier 1 Research Report (Domestic Edition)."
This report analyzes the operating conditions of more than a dozen ...[Details]
Robotics
has become
LiDAR
's "second growth curve."
While LiDAR was still battling with its "pure vision" rivals in the automotive field, another field ignited the demand f...[Details]
On August 21st, Zhiyuan Robotics revealed at its first partner conference that it expects shipments to reach thousands of units this year and tens of thousands next year. The company hopes to reach...[Details]
The all-new MG4 was recently officially announced on the Ministry of Industry and Information Technology's (MIIT) new vehicle announcement. The all-new MG4's semi-solid-state battery version addres...[Details]
introduction
The concept of the smart home is gradually developing and gaining market acceptance. We believe its ultimate form lies in the interconnection of all home appliances through open i...[Details]
On August 21st, BYD announced the launch of its next-generation "Little White Pile" product, the "Lingchong"
charging
pile
, which is now available for general sale. This charging pile feat...[Details]
Methods of DC motor speed regulation:
1. The voltage regulator can be used to change the input voltage and speed directly, which is often used for large kilowatt-level motors.
2. Thyristo...[Details]
1. Introduction
In 2015, Apple's new MacBook and Apple Watch both featured force-sensing technology, which Apple calls Force Touch. Each time a user presses the touchpad, the device not only p...[Details]
On August 20, Huawei Device announced that the all-new M7 is the first to feature an in-cabin laser vision solution. This solution offers enhanced active safety capabilities compared to primary vis...[Details]
Lithium-ion batteries are a key component of electric vehicles. Their high energy density enables them to store a large amount of energy in a relatively compact and lightweight package, which is cr...[Details]
introduction
As core electronic components used in vastly different fields, automotive-grade chips and mobile/consumer-grade chips exhibit significant differences in their...[Details]
Talking
京公网安备 11010802033920号
EEWORLD
