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MBR1630

Description
16 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size475KB,2 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
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MBR1630 Overview

16 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC

  omponents
21201 Itasca Street Chatsworth

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Features
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
MBR1620
THRU
MBR1660
16 Amp
Schottky Barrier
Rectifier
20 to 60 Volts
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
20V
30V
35V
40V
45V
60V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
TO-220AC
B
C
K
L
M
D
A
PIN
1
2
MBR1620
MBR1630
MBR1635
MBR1640
MBR1645
MBR1660
MBR1620
MBR1630
MBR1635
MBR1640
MBR1645
MBR1660
14V
21V
24.5V
28V
31.5V
42V
E
F
G
I
H
J
N
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
MBR1620-1645
MBR1660
MBR1620-1645
MBR1660
PIN 1
PIN 2
I
F(AV)
16A
T
C
= 125°C
CASE
I
FSM
150A
8.3ms, half sine


A
B
C
D
E
F
G
H
I
J
K
L
M
N

MM

14.22
9.65
2.54
5.84
9.65
------
12.70
4.83
0.51
0.30
3.53
3.56
1.14
2.03


15.88
10.67
3.43
6.86
10.67
6.35
14.73
5.33
1.14
0.64
4.09
4.83
1.40
2.92
 
INCHES



.560
.625
.380
.420
.100
.135
.230
.270
.380
.420
------
.250
.500
.580
.190
.210
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
.080
.115
V
F
.63V
.75V
.57V
.65V
I
FM
= 16A
T
J
= 25°C
T
J
= 125°C
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
MBR1620-1645
MBR1660
MBR1620-1645
MBR1660
IR
0.2mA
1mA
40mA
50mA
450pF
T
J
= 25°C
T
J
= 25°C
T
J
= 125°C
T
J
= 125°C
Measured at
1.0MHz, V
R
=4.0V
Typical Junction
Capacitance
C
J
www.kersemi.com

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Description 16 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC
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