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MBR2545CT-1P

Description
15 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size126KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

MBR2545CT-1P Overview

15 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA

VS-MBRB25..CTPbF, VS-MBR25..CT-1PbF Series
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
VS-MBRB25..CTPbF
VS-MBR25..CT-1PbF
FEATURES
150 °C T
J
operation
Center tap D
2
PAK and TO-262 packages
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
D
2
PAK
TO-262
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
2 x 15 A
35 V/45 V
40 mA at 125 °C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
30 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform (per device)
T
C
= 130 °C (per leg)
VALUES
30
30
35/45
1060
0.73
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB2535CTPbF
VS-MBR2535CT-1PbF
35
VS-MBRB2545CTPbF
VS-MBR2545CT-1PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
I
FRM
TEST CONDITIONS
T
C
= 130 °C, rated V
R
Rated V
R
, square wave, 20 kHz, T
C
= 130 °C
5 μs sine or 3 μs
rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
15
30
30
1060
A
UNITS
Peak repetitive forward current per leg
Non-repetitive peak surge current
I
FSM
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
E
AS
I
AR
T
J
= 25 °C, I
AS
= 2 A, L = 8 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
150
16
2
mJ
A
Document Number: 94308
Revision: 16-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
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