LTO-DMS
MBR30100CT thru MBR30200CT
30 Amp HT Power Schottky Barrier Rectifier
100 Volts to 200 Volts
Features
* High Junction Temperature Capability
* Low Leakage Current and Low Forward Voltage Drop
* Low Power Loss and High Efficiency
Maximum Ratings
* Operating Junction Temperature: 150°C
* Storage Temperature: - 55 °C to +175°C
* Per diode Thermal Resistance 2.2°C/W Junction to Case
Mechanical Data
* Case: Molded Plastic
* Terminals: Plated Lead Solderable per
MIL-STD-202, Method 208
* Marking:Type Number
* Weight: 2.24 grams (approx)
LTO-DMS Semiconductor Corporation
1468, 86th Street, Brooklyn
New York, 11228, USA
Tel: (718) 234 6010 / (707) 3223 4679
Fax:(718) 234 6013 / (707) 3223 6696
TO-220AB
DIMENSIONS
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
INCHES
MIN
0.570
0.380
0.100
0.235
0.335
0.110
0.500
0.095
0.025
0.016
0.142
0.160
0.045
0.102 typ
MAX
0.620.
0.405
0.120
0.255
0.365
0.155
0.562
0.105
0.035
0.025
0.147
0.190
0.055
MM
MIN
14.4
9.66
2.54
5.97
8.51
2.80
12.7
2.42
0.64
0.41
3.61
4.06
1.14
2.6 typ
MAX
15.75
10.28
3.04
6.48
9.27
3.93
14.27
2.66
0.89
0.64
3.37
4.82
1.39
NO
TE
Symbol
VRRM
VRM
VR(RMS)
VF
IF(AV)
I
FSM
dv/dt
Characteristics
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Forward Voltage (Note 1)
I
F
=15.0A @TJ=25°C
Average Forward Current per leg
8.3ms Single Half-Sine-Wave
Peak Forward Surge Current
Voltage Rate Of Change (Rated VR)
Maximum DC Reverse Current
@TJ=25°C
@TJ=125°C
MBR30100CT
100
100
70
0.90
MBR30150CT
150
150
105
MBR30200CT
200
200
140
0.95
Unit
V
V
V
V
A
A
V/us
15
150
10000
0.2
40
2.0
200
-55to+150
-55to+175
IR
At Rated DC Blocking Voltage
mA
RthJC
CJ
TJ
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
°C/ W
pF
°C
°C
NOTES:
1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Revision:1
2002/06/17
Analogue and Mixed Signal
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