BDW53C datasheet, PDF - EEWORLD Datasheet

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BDW53C: Description4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size105KB，6 Pages; ManufacturerPower Innovations Limited; Websitehttp://www.power-innovations.com

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BDW53C Overview

4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB

BDW53C Parametric

Parameter Name	Attribute value
Maker	Power Innovations Limited
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	100 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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BDW53, BDW53A, BDW53B, BDW53C, BDW53D

NPN SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

Designed for Complementary Use with

BDW54, BDW54A, BDW54B, BDW54C and

BDW54D

40 W at 25°C Case Temperature

TO-220 PACKAGE

(TOP VIEW)

4 A Continuous Collector Current

Minimum h

of 750 at 3 V, 1.5 A

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings

at 25°C case temperature (unless otherwise noted)

RATING

BDW53

BDW53A

Collector-base voltage (I

= 0)

BDW53B

BDW53C

BDW53D

BDW53

BDW53A

Collector-emitter voltage (I

= 0) (see Note 1)

BDW53B

BDW53C

BDW53D

Emitter-base voltage

Continuous collector current

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

Operating junction temperature range

Operating temperature range

Operating free-air temperature range

NOTES: 1.

EBO

tot

½LI

stg

CEO

CBO

SYMBOL

VALUE

100

120

100

120

-65 to +150

°C

UNIT

These values apply when the base-emitter diode is open circuited.

Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.

Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I

B(on)

= 5 mA, R

= 100

Ω,

BE(off)

= 0, R

= 0.1

Ω,

= 20 V.

PRODUCT

INFORMATION

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

BDW53C Related Products

	BDW53C	BDW53	BDW53B	BDW53D	BDW53A
Description	4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB	4 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220AB	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB	4 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220	4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220
Maker	Power Innovations Limited	Power Innovations Limited	Power Innovations Limited	Power Innovations Limited	Power Innovations Limited
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	4 A	4 A	4 A	4 A	4 A
Collector-emitter maximum voltage	100 V	45 V	80 V	120 V	60 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	100	100	100	100	100
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON

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