MBR16Hxx, MBRF16Hxx, MBRB16Hxx
www.vishay.com
Vishay General Semiconductor
Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AC
ITO-220AC
FEATURES
Power pack
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
•
•
•
•
•
•
•
•
2
MBR16Hxx
PIN 1
PIN 2
2
1
MBRF16Hxx
PIN 1
1
CASE
PIN 2
TO-263AB
K
2
1
MBRB16Hxx
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
Package
Diode variations
16 A
35 V to 60 V
150 A
0.56 V, 0.62 V
100 μA
175 °C
TO-220AC, ITO-220AC, TO-263AB
Single
Case:
TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Non-repetitive avalanche energy
at 25 °C, I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Peak repetitive reverse surge current
at t
p
= 2.0 μs, 1 kHz
Peak non-repetitive reverse energy
(8/20 μs waveform)
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
Revision: 09-Aug-13
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
E
AS
I
FSM
I
RRM
E
RSM
V
C
dV/dt
T
J
, T
STG
V
AC
1.0
20
25
10 000
- 65 to + 175
1500
MBR16H35
35
35
35
MBR16H45
45
45
45
16
80
150
A
0.5
mJ
kV
V/μs
°C
V
MBR16H50
50
50
50
MBR16H60
60
60
60
A
mJ
V
UNIT
Document Number: 88784
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR16Hxx, MBRF16Hxx, MBRB16Hxx
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage
Maximum reverse current
SYMBOL
TEST CONDITIONS
I
F
= 16 A
I
F
= 16 A
Rated V
R
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
-
0.52
-
6.0
MBR16H35
MBR16H45
TYP.
V
F (1)
I
R (2)
MAX.
0.66
0.56
100
20
-
0.58
-
4.0
MBR16H50
MBR16H60
TYP.
MAX.
0.73
0.62
100
20
V
μA
mA
UNIT
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case
SYMBOL
R
JC
MBR
1.5
MBRF
3.0
MBRB
1.5
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
Note
(1)
AEC-Q101 qualified
PREFERRED P/N
MBR16H45-E3/45
MBRF16H45-E3/45
MBRB16H45-E3/45
MBRB16H45-E3/81
MBR16H45HE3/45
(1)
MBRF16H45HE3/45
(1)
MBRB16H45HE3/45
(1)
MBRB16H45HE3/81
(1)
UNIT WEIGHT (g)
1.80
1.94
1.33
1.33
1.80
1.94
1.33
1.33
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tube
Tape and reel
Revision: 09-Aug-13
Document Number: 88784
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR16Hxx, MBRF16Hxx, MBRB16Hxx
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Vishay General Semiconductor
20
100
Instantaneous Reverse Leakage
Current (mA)
MBR, MBRB
Average Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
15
1
MBRF
10
0.1
MBR16H35, MBR16H45
MBR16H50, MBR16H60
T
J
= 25 °C
0.01
5
0.001
0
0
25
50
75
100
125
150
175
0.0001
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
150
10 000
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Peak Forward Surge Current (A)
100
75
50
25
0
1
10
100
Junction Capacitance (pF)
125
1000
MBR16H35, MBR16H45
MBR16H50, MBR16H60
100
0.1
1
10
100
Number
of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
10
T
J
= 150 °C
10
T
J
= 25 °C
1
T
J
= 125 °C
0.1
MBR16H35, MBR16H45
MBR16H50, MBR16H60
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 09-Aug-13
Document Number: 88784
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBR16Hxx, MBRF16Hxx, MBRB16Hxx
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AC
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91) DIA.
0.148 (3.74) DIA.
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
PIN 1
PIN 2
CASE
Vishay General Semiconductor
ITO-220AC
0.404 (10.26)
0.384 (9.75)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
45° REF.
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.671 (17.04)
0.651 (16.54)
PIN
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.603 (15.32)
0.573 (14.55)
0.600 (15.24)
0.580 (14.73)
7° REF.
0.350 (8.89)
0.330 (8.38)
PIN
1
2
0.191 (4.85)
0.171 (4.35)
7° REF.
2
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.33 (8.38) MIN.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 09-Aug-13
Document Number: 88784
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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