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MBRF2090CT

Description
10 A, 90 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size912KB,2 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
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MBRF2090CT Overview

10 A, 90 V, SILICON, RECTIFIER DIODE

MBRF2035CT - MBRF20150CT
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
o
260 C/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: ITO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
Units
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
o
Maximum Average Forward Rectified Current at T
C
=135 C
Total device
Per Leg
Peak Repetitive Forward Current Per leg (Rated V
R
, Square
o
Wave, 20KHz) at Tc=135 C
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
o
I
F
=10A, Tc=25 C
I
F
=10A, Tc=125
o
C
o
I
F
=20A, Tc=25 C
o
I
F
=20A, Tc=125 C
o
Maximum Instantaneous Reverse Current @ Tc=25 C
o
at Rated DC Blocking Voltage
@ Tc=125 C
Voltage Rate of Change, (Rated V
R
)
Typical Junction Capacitance
RMS Isolation Voltage (MBRF Type Only) from Terminals to
Heatsink with t=1.0 Second, RH
≦30%
Typical Thermal Resistance Per Leg (Note 3)
Maximum Ratings and Electrical Characteristics
o
2035
CT
2045
CT
2050
CT
2060
CT
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
I
R
dV/dt
Cj
35
24
35
45
31
45
50
35
50
60
42
60
20
10
20
2090 20100 20150
CT
CT
CT
90
63
90
100
70
100
150
105
150
V
V
V
A
A
A
150
1.0
-
0.57
0.84
0.72
0.80
0.70
0.95
0.85
0.5
0.85
0.75
0.95
0.85
0.95
0.85
1.05
0.95
A
V
0.1
15
400
0.1
10
10,000
5.0
mA
V/uS
pF
V
V
ISO
R
θJC
1.5
310
4500 (Note 4)
3500 (Note 5)
1500 (Note 6)
3.5
o
Operating Junction Temperature Range
T
J
-65 to +150
Storage Temperature Range
-65 to +175
T
STG
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate
4. Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset.
5. Clip Mounting (on case), where leads do overlap heatsink.
6. Screw Mounting with 4-40 screw, where washer diameter is
≦4.9
mm (0.19”)
C/W
o
C
o
C
- 146 -
www.kersemi.com

MBRF2090CT Related Products

MBRF2090CT MBRF20150CT
Description 10 A, 90 V, SILICON, RECTIFIER DIODE 20 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB

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