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MBRF40030

Description
20 A, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size811KB,2 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
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MBRF40030 Overview

20 A, SILICON, RECTIFIER DIODE, TO-220AB

MBRF40020(R)
THRU
MBRF400100(R)
SCHOTTKY DIODES MODULE TYPE 400A
Features
High Surge Capability
Types Up to 100V V
RRM
400Amp Rectifier
20-100 Volts
FULL PACKAGE
A
Maximum Ratings
Operating Temperature: -40 C to +175
Storage Temperature: -40 C to +175
M
J
K
B
C
L
Part Number
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum
RMS Voltage
14V
21V
25V
28V
32V
42V
56V
70V
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
LUG
Teminal
Anode 1
LUG
Teminal
Anode 2
F
D
H
MBRF40020(R)
MBRF40030(R)
MBRF40035(R)
MBRF40040(R)
MBRF40045(R)
MBRF40060(R)
MBRF40080(R)
MBRF400100(R)
G
E
LUG
LUG
Teminal
Teminal
Cathode 1 Cathode 2
Electrical Characteristics @ 25
Average Forward
(Per pkg)
Current
Peak Forward Surge
(Per leg)
Current
Maximum
(Per leg)
Instantaneous
NOTE (1)
Forward Voltage
NOTE (1)
Maximum
Instantaneous
Reverse Current At
Rated DC Blocking
Voltage
(Per leg)
I
F(AV)
I
FSM
V
F
Unless Otherwise Specified
400A
3000A
0.65V
0.75V
0.84V
Baseplate
Common Cathode
Baseplate
R=Common Anode
T
C
=125
DIMENSIONS
INCHES
MIN
MAX
¼
NOM
3.150
1.585
1.565
.700
.800
.119
.132
1.375
REF
3.65
3.55
.635
.604
- 20
1/4
.380
.410
.195
.185
.295
.275
MM
MIN
80.01
39.75
17.78
3.02
34.92
90.17
15.35
UNC
9.65
4.70
6.99
MAX
NOM
40.26
20.32
3.35
REF
92.71
16.35
FULL
10.41
4.95
7.49
NOTE
8.3ms , half sine
(MBRF40020~MBRF40045)
(MBRF40060)
(MBRF40080~MBRF400100)
I
FM
=200A;
T
j
= 25
I
R
5.0
m
A T
J
= 25
200
mA
T
J
=125
0.8
/W
Maximum Thermal
Resistance Junction
(Per leg)
To Case
R jc
DIM
A
B
C
E
F
G
H
J
K
L
M
NOTE :
(1)
Pulse Test: Pulse Width 300 usec, Duty Cycle
<
2%

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MBRF40030 MBRF400100 MBRF40020 MBRF40035 MBRF40040 MBRF40045 MBRF40060 MBRF40080 MBRF40100CT
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