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BDW83D

Description
15 A, 120 V, NPN, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size183KB,6 Pages
ManufacturerPower Innovations Limited
Websitehttp://www.power-innovations.com
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BDW83D Overview

15 A, 120 V, NPN, Si, POWER TRANSISTOR

BDW83D Parametric

Parameter NameAttribute value
MakerPower Innovations Limited
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage120 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with
BDW84, BDW84A, BDW84B, BDW84C and
BDW84D
150 W at 25°C Case Temperature
15 A Continuous Collector Current
Minimum h
FE
of 750 at 3 V, 6 A
E
B
SOT-93 PACKAGE
(TOP VIEW)
1
q
q
q
C
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BDW83
BDW83A
Collector-base voltage (I
E
= 0)
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
Collector-emitter voltage (I
B
= 0) (see Note 1)
BDW83B
BDW83C
BDW83D
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
B
P
tot
P
tot
½LI
C
2
T
j
T
stg
T
A
V
CEO
V
CBO
SYMBOL
VALUE
45
60
80
100
120
45
60
80
100
120
5
15
0.5
150
3.5
100
-65 to +150
-65 to +150
-65 to +150
V
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 1.2 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 5 mA, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

BDW83D Related Products

BDW83D BDW83B BDW83C BDW83
Description 15 A, 120 V, NPN, Si, POWER TRANSISTOR 15 A, 80 V, NPN, Si, POWER TRANSISTOR 15 A, 100 V, NPN, Si, POWER TRANSISTOR 15 A, 45 V, NPN, Si, POWER TRANSISTOR
Maker Power Innovations Limited Power Innovations Limited Power Innovations Limited Power Innovations Limited
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow unknow unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 15 A 15 A 15 A 15 A
Collector-emitter maximum voltage 120 V 80 V 100 V 45 V
Configuration DARLINGTON DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 100 100 100 100
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
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