MCP1754/MCP1754S
150 mA, 16V, High Performance LDO
Features
•
•
•
•
•
•
•
•
High PSRR: >70 dB @ 1 kHz typical
56.0 µA Typical Quiescent Current
Input Operating Voltage Range: 3.6V to16.0V
150 mA Output Current for All Output Voltages
Low Drop Out Voltage, 300 mV Typical @ 150 mA
0.4% Typical Output Voltage Tolerance
Standard Output Voltage Options (1.8V, 2.5V,
2.8V, 3.0V, 3.3V, 4.0V, 5.0V)
Output Voltage Range 1.8V to 5.5V in 0.1V
Increments (tighter increments also possible per
design)
Output Voltage Tolerances of ±2.0% Over Entire
Temperature Range
Stable with Minimum 1.0 µF Output Capacitance
Power Good Output
Shutdown Input
True Current Foldback Protection
Short-Circuit Protection
Overtemperature Protection
Description
The MCP1754/MCP1754S is a family of CMOS low
dropout (LDO) voltage regulators that can deliver up to
150 mA of current while consuming only 56.0 µA of
quiescent current (typical). The input operating range is
specified from 3.6V to 16.0V, making it an ideal choice
for four to six primary cell battery-powered applications,
12V mobile applications and one- to three-cell Li-Ion-
powered applications.
The MCP1754/MCP1754S is capable of delivering
150 mA with only 300 mV (typical) of input to output
voltage differential. The output voltage tolerance of the
MCP1754/MCP1754S is typically ±0.4% at +25°C and
±2.0% maximum over the operating junction
temperature range of -40°C to +125°C. Line regulation
is ±0.01% typical at +25°C.
Output voltages available for the MCP1754/MCP1754S
range from 1.8V to 5.5V. The LDO output is stable when
using only 1 µF of output capacitance. Ceramic,
tantalum or aluminum electrolytic capacitors may all be
used for input and output. Overcurrent limit and
overtemperature shutdown provide a robust solution for
any application.
The MCP1754/MCP1754S family introduces a true
current foldback feature. When the load impedance
decreases beyond the MCP1754/MCP1754S load
rating, the output current and voltage will gracefully
foldback towards 30 mA at about 0V output. When the
load impedance decreases and returns to the rated
load, the MCP1754/MCP1754S will follow the same
foldback curve as the device comes out of current
foldback.
Package options for the MCP1754S include the SOT-
23A, SOT-89-3, SOT-223-3 and 2x3 DFN-8.
Package options for the MCP1754 include the SOT-23-
5, SOT-223-5, and 2x3 DFN-8.
•
•
•
•
•
•
•
Applications
•
•
•
•
•
•
•
•
•
•
•
Battery-powered Devices
Battery-powered Alarm Circuits
Smoke Detectors
CO
2
Detectors
Pagers and Cellular Phones
Smart Battery Packs
PDAs
Digital Cameras
Microcontroller Power
Consumer Products
Battery-powered Data Loggers
Related Literature
• AN765, “Using Microchip’s Micropower LDOs”,
DS00765, Microchip Technology Inc., 2007
• AN766, “Pin-Compatible CMOS Upgrades to
BiPolar LDOs”, DS00766,
Microchip Technology Inc., 2003
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001
©
2011 Microchip Technology Inc.
DS22276A-page 1
MCP1754/MCP1754S
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
Input Voltage, V
IN
..................................................................+
17.6V
VIN, PWRGD, SHDN ..................... (GND-0.3V) to (V
IN
+0.3V)
VOUT .................................................. (GND-0.3V) to (+5.5V)
Internal Power Dissipation ............ Internally-Limited (Note
6)
Output Short Circuit Current ................................. Continuous
Storage temperature .....................................-55°C to +150°C
Maximum Junction Temperature ......................165°C(Note
7)
Operating Junction Temperature...................-40°C to +150°C
ESD protection on all pins
..........≥ 4
kV HBM and
≥
200V MM
AC/DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise specified, all limits are established for V
IN
= V
R
+ 1V,
Note 1,
I
LOAD
= 1 mA, C
OUT
=
1 µF (X7R), C
IN
= 1 µF (X7R), T
A
= 25°C, t
r(VIN)
= 0.5V/µs, SHDN = V
IN
, PWRGD = 10K to V
OUT
.
Boldface
type applies for junction temperatures, T
J
(Note
7)
of -40°C to +125°C.
Parameters
Input / Output Characteristics
Input Operating Voltage
Output Voltage Operating
Range
Input Quiescent Current
Input Quiescent Current
for SHDN mode
Ground Current
Maximum Output Current
Output Soft Current Limit
Sym
V
IN
V
OUT-RANGE
I
q
I
SHDN
I
GND
I
OUT_mA
I
OUT_CL
Min
3.6
1.8
—
—
—
150
—
Typ
—
—
56
0.1
150
—
250
Max
16.0
5.5
90
5
250
—
—
Units
V
V
µA
µA
µA
mA
mA
I
L
= 0 mA
Conditions
SHDN = GND
I
LOAD
= 150 mA
V
IN
= V
IN(MIN)
, V
OUT
≥
0.1V,
Current measured 10 ms after
load is applied
Pulse Duration < 100 ms, Duty
Cycle < 50%, V
OUT
≥
0.1V,
Note 6
V
IN
= V
IN(MIN)
, V
OUT
= GND
V
IN
= 0 to 16V, I
LOAD
= 150 mA
Output Pulse Current Limit
I
OUT_CL
—
250
—
mA
Output Short Circuit
Foldback Current
Output Voltage Overshoot
on Startup
Note 1:
2:
3:
4:
5:
6:
I
OUT_SC
V
OVER
—
—
30
0.5
—
—
mA
%V
OUT
7:
The minimum V
IN
must meet two conditions: V
IN
≥
3.6V and V
IN
≥
V
R
+ V
DROPOUT(MAX)
.
V
R
is the nominal regulator output voltage when the input voltage V
IN
= V
Rated
+ V
DROPOUT(MAX)
or Vi
IN
= 3.6V (which-
ever is greater); I
OUT
= 1 mA.
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
6
/ (V
R
*
ΔTemperature),
V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal V
R
measured value. The nominal VR measured value is obtained with
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
©
2011 Microchip Technology Inc.
DS22276A-page 5
GD32 MCU
京公网安备 11010802033920号
EEWORLD
