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BDX33B

Description
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220
CategoryDiscrete semiconductor    The transistor   
File Size138KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BDX33B Overview

10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220

BDX33B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Other featuresLEADFORM OPTIONS ARE AVAILABLE
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment70 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
VCEsat-Max2.5 V
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BDX33B/D
Darlington Complementary
Silicon Power Transistors
. . . designed for general purpose and low speed switching applications.
High DC Current Gain — hFE = 2500 (typ.) at IC = 4.0
Collector–Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min.) — BDX33B, 34B
VCEO(sus) =
100 Vdc (min.) — BDX33C, 34C
Low Collector–Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc — BDX33B, 33C/34B, 34C
Monolithic Construction with Build–In Base–Emitter Shunt resistors
TO–220AB Compact Package
MAXIMUM RATINGS
BDX33B
BDX33C*
BDX34B
*
BDX34C
*Motorola Preferred Device
NPN
PNP
PD, POWER DISSIPATION (WATTS)
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Rating
Symbol
VCEO
VCB
VEB
IC
IB
BDX33B
BDX34B
80
80
BDX33C
BDX34C
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
5.0
10
15
Collector Current — Continuous
Peak
Base Current
0.25
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
70
0.56
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
DARLINGTON
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 – 100 VOLTS
70 WATTS
_
C
THERMAL CHARACTERISTICS
Characteristic
CASE 221A–06
TO–220AB
Symbol
R
θJC
Max
Unit
Thermal Resistance, Junction to Case
1.78
_
C/W
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

BDX33B Related Products

BDX33B BDX34B
Description 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
Is it Rohs certified? incompatible incompatible
Maker Motorola ( NXP ) Motorola ( NXP )
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow
Other features LEADFORM OPTIONS ARE AVAILABLE LEADFORM OPTIONS ARE AVAILABLE
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 10 A 10 A
Collector-emitter maximum voltage 80 V 80 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 750 750
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN PNP
Maximum power consumption environment 70 W 70 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz
VCEsat-Max 2.5 V 2.5 V
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Index Files: 860  1827  806  1472  2320  18  37  17  30  47 
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