DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BDX35; BDX36; BDX37
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 16
Philips Semiconductors
Product specification
NPN switching transistors
FEATURES
•
High current (max. 5 A)
•
Low voltage (max. 75 V).
APPLICATIONS
•
High-current switching in power applications.
DESCRIPTION
NPN switching transistor in a TO-126; SOT32 plastic
package.
handbook, halfpage
BDX35; BDX36; BDX37
PINNING
PIN
1
2
3
emitter
collector, connected to the metal part of
the mounting surface
base
DESCRIPTION
2
3
1
1
2
3
Top view
MAM254
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BDX35
BDX36; BDX37
V
CEO
collector-emitter voltage
BDX35; BDX36
BDX37
I
C
P
tot
h
FE
f
T
t
off
collector current (DC)
total power dissipation
DC current gain
transition frequency
turn-off time
T
mb
≤
75
°C
I
C
= 0.5 A; V
CE
= 10 V
I
C
= 0.5 A; V
CE
= 5 V; f = 100 MHz
I
Con
= 5 A; I
Bon
= 0.5 A; I
Boff
=
−0.5
A
open base
−
−
−
−
45
−
−
−
−
−
−
−
100
350
60
75
5
15
450
−
500
MHz
ns
V
V
A
W
CONDITIONS
open emitter
−
−
−
−
100
120
V
V
MIN.
TYP.
MAX.
UNIT
1997 Apr 16
2
Philips Semiconductors
Product specification
NPN switching transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BDX35
BDX36; BDX37
V
CEO
collector-emitter voltage
BDX35; BDX36
BDX37
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
mb
≤
75
°C
T
amb
≤
25
°C
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BDX35; BDX36; BDX37
MIN.
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
100
120
60
75
5
5
10
2
15
1.25
+150
150
+150
V
V
V
V
V
A
A
A
UNIT
W
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
CONDITIONS
in free air
VALUE
100
5
UNIT
K/W
K/W
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
BDX35
I
CBO
collector cut-off current
BDX36; BDX37
I
EBO
h
FE
emitter cut-off current
DC current gain
BDX35; BDX36
BDX37
V
CEsat
V
CEsat
collector-emitter saturation voltage I
C
= 5 A; I
B
= 0.5 A
collector-emitter saturation voltage
BDX35; BDX37
BDX36
1997 Apr 16
I
C
= 7 A; I
B
= 0.7 A
I
C
= 10 A; I
B
= 1 A
3
−
−
−
−
1.2
2
V
V
I
E
= 0; V
CB
= 100 V
I
E
= 0; V
CB
= 100 V; T
j
= 100
°C
I
C
= 0; V
EB
= 5 V
I
C
= 0.5 A; V
CE
= 10 V; see Fig.2
45
45
−
130
80
−
450
450
900
mV
−
−
−
−
−
−
100
10
100
nA
µA
nA
PARAMETER
collector cut-off current
I
E
= 0; V
CB
= 80 V
I
E
= 0; V
CB
= 80 V; T
j
= 100
°C
−
−
−
−
100
10
nA
µA
CONDITIONS
MIN.
TYP.
MAX. UNIT
Philips Semiconductors
Product specification
NPN switching transistors
BDX35; BDX36; BDX37
SYMBOL
V
BEsat
V
BEsat
PARAMETER
base-emitter saturation voltage
base-emitter saturation voltage
BDX35; BDX37
BDX36
CONDITIONS
I
C
= 5 A; I
B
= 0.5 A
I
C
= 7 A; I
B
= 0.7 A
I
C
= 10 A; I
B
= 1 A
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 0.5 A; V
CE
= 5 V; f = 100 MHz
I
Con
= 1 A; I
Bon
= 0.1 A; I
Boff
=
−0.1
A
I
Con
= 2 A; I
Bon
= 0.2 A; I
Boff
=
−0.2
A
I
Con
= 5 A; I
Bon
= 0.5 A; I
Boff
=
−0.5
A
MIN.
−
−
−
−
−
−
−
−
−
−
−
TYP.
−
−
−
40
100
MAX. UNIT
1.7
2
2.5
60
−
V
V
V
pF
MHz
C
c
f
T
t
on
collector capacitance
transition frequency
Switching times (between 10% and 90% levels)
turn-on time
60
−
180
600
450
350
100
80
300
800
700
500
ns
ns
ns
ns
ns
ns
t
off
turn-off time
I
Con
= 1 A; I
Bon
= 0.1 A; I
Boff
=
−0.1
A
I
Con
= 2 A; I
Bon
= 0.2 A; I
Boff
=
−0.2
A
I
Con
= 5 A; I
Bon
= 0.5 A; I
Boff
=
−0.5
A
MGD840
handbook, full pagewidth
80
hFE
60
40
20
0
10
−1
1
10
10
2
10
3
IC (mA)
10
4
V
CE
= 1 V.
Fig.2 DC current gain; typical values.
1997 Apr 16
4
Philips Semiconductors
Product specification
NPN switching transistors
PACKAGE OUTLINE
BDX35; BDX36; BDX37
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P1
P
D
L1
L
1
2
w
M
3
c
Q
e
e1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
2.7
2.3
b
p
0.88
0.65
c
0.60
0.45
D
11.1
10.5
E
7.8
7.2
e
4.58
e1
2.29
L
16.5
15.3
L1
(1)
max
2.54
Q
1.5
0.9
P
3.2
3.0
P1
3.9
3.6
w
0.254
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT32
REFERENCES
IEC
JEDEC
TO-126
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-03-04
1997 Apr 16
5
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