MMBZ6V8DC/A thru MMBZ27VDC/A
New Product
Vishay Semiconductors
formerly General Semiconductor
Dual Zener Transient Voltage Suppressor
Diodes for ESD Protection
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
TO-236AB (SOT-23)
Mounting Pad Layout
Top View
0.031 (0.8)
0.035 (0.9)
0.079 (2.0)
1
2
max. .004 (0.1)
Dimensions in inches
and (millimeters)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
0.037 (0.95)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
Marking:
MMBZ15VDC = TC5
MMBZ27VDC = TC7
MMBZ6V8DC = ?
MMBZ15VDA = TA5
MMBZ27VDA = TA7
MMBZ6V8DA = ?
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
MMBZ15VDC
MMBZ27VDC
MMBZ15VDA
MMBZ27VDA
Features
• Dual Silicon Planar Zener Diodes with Common
Cathode or Common Anode configurations.
• Dual package provides for Bidirectional or
separate unidirectional configurations.
• The dual configurations protect two separate lines
with only one device.
• Peak Power: 40 watts @1ms (Bidirectional) .
• High temperature Soldering Guaranteed:
230˚C for 10 seconds.
• Ideal for ESD Protection.
• For bidirectional operation, circuit connected to
pins 1 and 2. For unidirectional operation, circuit
connected to pins 1 and 3 or pins 2 and 3.
(T
A
= 25°C unless otherwise noted)
Top
View
Common Cathode
Common Anode
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Terminals:
Solderable per MIL-STD-750, method 2026
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape)
E9/3K per 7” reel (8mm tape)
Maximum Ratings and Thermal Characteristics
Parameter
Peak Power Dissipation
(1)
@ T
A
≤
25˚C
Total Power Dissipation
on FR-5 Board
(2
)
Total Power Dissipation
on Alumina Substrate
(3)
at T
A
= 25°C
Derate above 25˚C
at T
A
= 25°C
Derate above 25˚C
Symbol
P
pk
P
D
P
D
R
ΘJA
T
J,
T
stg
Value
40
(4)
225
1.8
300
2.4
556
–55 to +150
Unit
W
mW
mW/˚C
mW
mW/˚C
°C/W
°C
Thermal Resistance Junction to Ambient Air
Operating and Storage Temperature Range
Notes:
(1) Nonrepetitive current pulse per Figure 2 and derate above TA = 25°C per Figure 3.
(2) FR-5 = 1.0 x 0.75 x 0.62 in.
(3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina.
(4) The MMBZ6V8DC/A is rated at 24V
Document Number 88358
21-May-02
www.vishay.com
1
MMBZ6V8DC/A thru MMBZ27VDC/A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Breakdown Voltage
V
BR
(Volts)
(1)
Type
MMBZ6V8D
MMBZ15VD
MMBZ27VD
Min
6.48
14.30
25.65
Nom
6.8
15.00
27.00
Max
7.14
15.80
28.35
(T
J
= 25°C unless otherwise noted)
@I
T
mA
1.0
1.0
1.0
Max Forward
Max Reverse
Working
Voltage
Voltage
Peak
Max
Max
@ I
RSM
(2)
Max
Reverse
Reverse
Reverse
(Clamping Voltage) Temperature
Voltage
Leakage
Surge
V
C
@I
F
Coefficient of V
F
V
RWM
Current I
R
Current I
PP
(Volts)
V
BR
(mV/°C) (Volts) (mA)
(Volts)
(nA)
(Amps)
4.5
12.8
22.0
500
100
80
2.5
1.9
1.0
9.6
21.2
38.0
3.4
16
30
1.1
0.9
1.1
200
200
200
Notes:
(1) V
BR
measured at pulse test current IT at an ambient temperature of 25°C
(2) Surge current waveform per Figure 2 and derate per Figure 3
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
FIG. 1 - STEADY STATE POWER DERATING CURVE
Layout for R
ΘJA
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in. (0.3mm)
0.30 (7.5)
0.12 (3)
300
250
P
D
, POWER DISSIPATION (mW)
ALUMINA SUBSTRATE
200
150
FR-5 BOARD
.04 (1)
.08 (2)
.04 (1)
.08 (2)
100
0.59 (15)
0.47 (12)
0.03 (0.8)
50
0.2 (5)
0
0
25
50
75
100
125
150
175
T, Temperature (°C)
Dimensions in inches (millimeters)
0.06 (1.5)
0.20 (5.1)
FIG. 2 - PULSE WAVEFORM
PULSE WIDTH (tp) is DEFINED
as that POINT WHERE the PEAK
CURRENT DECAYS to 50% of
I
RSM
tr≤10µs
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T
A
=25Z(
°C)
FIG. 3 - PULSE DERATING CURVE
100
t
r
PEAK VALUE – I
RSM
75
100
VALUE(%)
HALF VALUE – I
RSM
2
50
50
tp
25
0
0
1
2
3
t, TIME (ms)
4
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (°C)
www.vishay.com
2
Document Number 88358
21-May-02
Embedded System
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