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SS26

Description
2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size623KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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SS26 Overview

2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA

SS26 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionSMB, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Maximum power consumption limit1.3 W
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage60 V
Maximum average forward current2 A
Maximum non-repetitive peak forward current50 A
MCC
Features
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
SS22
THRU
SS210
2 Amp Schottky
Rectifier
20 to 100 Volts
DO-214AC
(SMAJ) (High Profile)
H
Cathode Band
Schottky Barrier Rectifier
Guard Ring Protection
Low Forward Voltage
Reverse Energy Tested
High Current Capability
Extremely Low Thermal Resistance
Maximum Ratings
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 15
°C/W
Junction To Lead
MCC
Catalog
Number
SS22
SS23
SS24
SS25
SS26
SS28
SS210
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
40V
50V
60V
80V
100V
Maximum
RMS
Voltage
14V
21V
28V
35V
42V
56V
70V
Maximum
DC
Blocking
Voltage
20V
30V
40V
50V
60V
80V
100V
J
SS22
SS23
SS24
SS25
SS26
SS28
SS210
A
C
E
F
G
D
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
SS22-SS24
SS25-SS26
SS28-SS210
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
I
F(AV)
I
FSM
2.0A
50A
T
J
= 100°C
8.3ms, half sine
DIM
A
B
C
D
E
F
G
H
J
INCHES
MIN
.078
.067
.002
---
.035
.065
.205
.160
.100
MAX
.116
.089
.008
.02
.055
.096
.224
.180
.112
DIMENSIONS
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
MAX
2.95
2.25
.20
.51
1.40
2.45
5.69
4.57
2.84
NOTE
V
F
.55V
.70V
.85V
0.5mA
I
FM
= 2.0A;
T
J
= 25°C*
SUGGESTED SOLDER
PAD LAYOUT
0.090”
I
R
T
J
= 25°C
0.085”
Typical Junction
Capacitance
230pF
SS22
C
J
50pF
SS23-SS210
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
Measured at
1.0MHz, V
R
=4.0V
0.070”
www.mccsemi.com

SS26 Related Products

SS26 SS28 SS24 SS25 SS23 SS22 SS210
Description 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AA RECTIFIER DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA
Number of terminals 2 2 - 2 2 - 2
Number of components 1 1 - 1 1 - 1
Processing package description SMB, 2 PIN Plastic, SMB, 2 PIN - Plastic, SMB, 2 PIN Plastic, SMAJ, 2 PIN - SMB, 2 PIN
state ACTIVE ACTIVE ACTIVE TRANSFERRED DISCONTINUED - DISCONTINUED
packaging shape Rectangle Rectangle - Rectangle Rectangle - Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
surface mount Yes Yes - Yes Yes - Yes
Terminal form C BEND C BEND - C BEND C BEND - C BEND
Terminal location pair pair - pair pair - pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy
Craftsmanship SCHOTTKY SCHOTTKY - SCHOTTKY SCHOTTKY - SCHOTTKY
structure single single - single single - single
Diode component materials silicon silicon - silicon silicon - silicon
Diode type rectifier diode rectifier diode rectifier diode rectifier diode rectifier diode - rectifier diode
application GENERAL PURPOSE EFFICIENCY - EFFICIENCY GENERAL PURPOSE - GENERAL PURPOSE
Phase 1 1 - 1 1 - 1
Maximum repetitive peak reverse voltage 60 V 80 V - 50 V 30 V - 100 V
Maximum average forward current 2 A 2 A - 2 A 2 A - 2 A
Maximum non-repetitive peak forward current 50 A 50 A - 75 A 50 A - 50 A
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