SEMICONDUCTOR
MTPT100
Three-Phase Bridge + Thyristor, 100A
MTPT10008 Thru MTPT10016
RoHS
RoHS
N
ell
High Power Products
80
32
R2
30
+
-
20
2
-
5.5
17
11
18
G
K
~
4
29
20
~
20
93.5MAX
~
6-M5 SCREWS
22MAX
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Three-phase bridge and a thyristor
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
G
R2
+
-
Applications
lnverter for AC or DC motor control
Current stablilzed power supply
Switching power supply
PRIMARY CHARACTERRISTICS
ADVANTAGE
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
Small thermal resistance
Weight: 250g (8.8 ozs)
I
F(AV)
V
RRM
I
FSM
I
R
V
FM
/ V
TM
T
J max.
100A
800V to 1600V
1200A
20
µA
1.3V
150ºC
Page 1 of 5
17
50.5MAX
SEMICONDUCTOR
MTPT100
RoHS
RoHS
N
ell
High Power Products
Maximum Ratings for Diodes
MAJOR RATINGS AND CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
MTPT100
PARAMETER
SYMBOL
UNIT
08
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
Output DC current three-phase full wave, T
c
= 100°C
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
Operating junction temperature range
Storage temperature range
I
2
t
T
J
T
STG
V
RRM
/ V
RRM
V
RSM
I
O
I
FSM
12
1200
1300
100
1200
16
1600
1700
V
V
A
A
800
900
7200
-40
to 150
-40
to 125
A
2
s
ºC
ºC
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
I
F = 100A
T
A = 25°C
T
A = 150°C
SYMBOL
MTPT100
UNIT
08
V
F
I
R
12
1.3
20
8
16
V
µA
mA
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diod
Maximum Ratings fo Thyristor
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum peak, one-cycle, on-state
non-repetitive surge current
SYMBOL
I
T(AV)
I
TSM
TEST CONDITIONS
180°
conduction, half sine wave ,50Hz
t
= 10
ms
t
= 8.3
ms
t
= 10
ms
Maximum I
2
t for fusing
I
2
t
t
= 8.3
ms
t
= 10
ms
t
= 8.3
ms
Maximum I
2
√
for fusing
t
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
2
t
I
√
VALUES
100
85
1200
UNITS
A
°C
A
No voltage
reapplied
1260
Sine half wave,
initial T
J
=
T
J
maximum
7200
6570
5040
4590
72
1.3
100
mA
400
kA
2
√s
V
A
2
s
100%V
RRM
reapplied
t
= 0.1
ms to
10
ms, no voltage reapplied
I
TM
= 100A ,
T
J
= 25 °C, 180°
conduction
Anode supply
= 12
V initial I
T
= 30
A, T
J
= 25 °C
Anode supply
= 12
V resistive load
= 1
Ω
Gate pulse:
10
V,
100 μs,
T
J
= 25 °C
V
TM
I
H
I
L
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical tum-off time
SYMBOL
t
d
t
r
t
q
TEST CONDITIONS
T
J
= 25 °C
,gate current = 1A dl
g
/dt = 1 A/µs
V
d
= 0.67 % V
DRM
I
TM
= 300A ; dl/dt = 15 A/µs ; T
J
= T
J
maximum,
V
R
= 50V ; dV/dt = 20V/µs ; gate 0V ,100Ω
VALUES
1
2
μs
50 to 150
UNITS
Page 2 of 5
SEMICONDUCTOR
MTPT100
RoHS
RoHS
N
ell
High Power Products
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
I
RRM
,
I
DRM
V
ISO
dV/dt
T
J
= 125 °C
50
Hz, circuit to base,
all terminals shorted, 25
ºC
,60s
T
J
=
T
J
maximum,
exponential to
67 %
rated V
DRM
TEST CONDITIONS
VALUES
20
2500
500
UNITS
mA
V
V/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
SYMBOL
P
GM
P
G(AV)
I
GM
-
V
GT
V
GT
T
J
= 25 °C
I
GT
V
GD
T
J
=
T
J
maximum, 67% V
DRM
applied
I
GD
dI/dt
T
J
= 25ºC
,I
GM
= 1.5A ,t
r
≤
0.5 µs
10
150
mA
A/μs
Anode supply
= 12
V,
resistive load; R
a
= 1
Ω
100
mA
V
t
p
≤
5
ms, T
J
=
T
J
maximum
TEST CONDITIONS
t
p
≤
5
ms, T
J
=
T
J
maximum
f
= 50
Hz, T
J
=
T
J
maximum
VALUES
15
5
3
10
V
3
UNITS
W
A
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
SYMBOL
T
J
, T
stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth
,
flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
about
3
hours to allow for the
spread of the compound.
TEST CONDITIONS
VALUES
- 40
to
125
0.3
°C/W
0.12
3
N.m
3
250
Approximate weight
8.8
oz.
g
UNITS
°C
Mounting
torque
± 10 %
to heatsink, M5
to terminal, M5
Device code
MTPT 100
1
2
16
3
1
2
3
-
-
-
Module type : “MTPT” for 3
Ø Br
i
dge + Thyr
i
stor
I
F(AV)
rating :
"100"
for 100 A
Voltage code : code x
100 =
V
RRM
Page 3 of 5
SEMICONDUCTOR
MTPT100
RoHS
RoHS
N
ell
High Power Products
Fig.1 Power dissipation
300
Three phase
W
240
A
160
200
Three phase
Fig.2 Forward current derating curve
180
120
120
80
60
P
vtot
0
0
I
D
20
40
60
80
A
100
40
I
D
0
0
T
c
50
100
°C
150
Fig.3 Transient thermal impedance
0.20
°C/
W
Fig.4 Max non-repetitive forward surge current
2000
A
50HZ
Z
th(j-
C
)
0.10
1000
Per one element
Single phase half wave
T
j
=25
°C
start
0
0.001
t
0.01
0.1
1.0
10
S
100
0
1
10
cycles
100
Fig.5 Forward characteristics
1000
max.
A
150
W
120
Fig.6 SCR power dissipation
90
100
60
30
I
F
10
0.5
V
F
1.0
1.5
2.0
V
2.5
T
j
=25
°C
P
TAV
0
0
I
D
20
40
60
80
A
100
Page 4 of5
SEMICONDUCTOR
MTPT100
RoHS
RoHS
N
ell
High Power Products
Fig.7 SCR forward current derating curve
200
A
160
0.50
Fig.8 SCR transient thermal impedance
°C
/
W
120
0.25
80
Z
th(j-
C
)
40
I
TAVM
0
0
T
c
50
100
0
°C
150
0.001
t
0.01
0.1
1.0
10
S
100
Fig.9 SCR forward characteristics
1000
A
max
.
max.
Fig.10 Gate trigger characteristics
100
V
Pe
ak
Peak Forward Gate Voltage
(10V)
10
100
Av
er
ag
e
at
e
Po
we
G
at
e
r
(
10
Po
w
W
)
er
(3
W
)
1
-10°C
135°C
I
T
10
0.5
V
TM
1.0
1.5
2.0
T
j
=25
°C
V
G
25°C
Maximum Gate Non-Trigger Voltage
V
2.5
0.1
10
1
I
G
10
2
10
3
mA
10
4
Page 5 of 5
Peak Gate Current
(3A)
G
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