Silicon N Channel MOSFET Tetrode
q
BF 994 S
For VHF applications, especially for input
and mixer stages with a wide tuning
range, e.g. in CATV tuners
Type
BF 994 S
Marking
MG
Ordering Code
(tape and reel)
Q62702-F1020
Pin Configuration
1
2
3
4
S
D
G
2
G
1
Package
1)
SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate 1/gate 2 peak source current
Total power dissipation,
T
S
< 76 ˚C
Storage temperature range
Channel temperature<
Thermal Resistance
Junction - soldering point
R
th Js
< 370
K/W
Symbol
V
DS
I
D
±
Values
20
30
10
200
150
Unit
V
mA
mW
I
G1/2SM
P
tot
T
stg
T
ch
– 55 … + 150 ˚C
1)
For detailed information see chapter Package Outlines.
BF 994 S
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Drain-source breakdown voltage
I
D
= 10
µ
A, –
V
G1S
= –
V
G2S
= 4 V
Gate 1 source breakdown voltage
±
I
G1S
= 10 mA,
V
G2S
=
V
DS
= 0
Gate 2 source breakdown voltage
±
I
G2S
= 10 mA,
V
G1S
=
V
DS
= 0
Gate 1 source leakage current
±
V
G1S
= 5 V,
V
G2S
=
V
DS
= 0
Gate 2 source leakage current
±
V
G2S
= 5 V,
V
G1S
=
V
DS
= 0
Drain current
V
DS
= 15 V,
V
G1S
= 0,
V
G2S
= 4 V
Gate 1 source pinch-off voltage
V
DS
= 15 V,
V
G2S
= 4 V,
I
D
= 20
µ
A
Gate 2 source pinch-off voltage
V
DS
= 15 V,
V
G1S
= 0,
I
D
= 20
µ
A
V
(BR) DS
±
±
±
±
Values
typ.
max.
Unit
20
8.5
8.5
–
–
2
–
–
–
–
–
–
–
–
–
–
–
14
14
50
50
20
2.5
2.0
V
V
(BR) G1SS
V
(BR) G2SS
I
G1SS
I
G2SS
nA
I
DSS
–
V
G1S (p)
–
V
G2S (p)
mA
V
BF 994 S
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
AC Characteristics
Forward transconductance
V
DS
= 15 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 1 kHz
Gate 1 input capacitance
V
DS
= 15 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 1 MHz
Gate 2 input capacitance
V
DS
= 15 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 1 MHz
Feedback capacitance
V
DS
= 15 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 1 MHz
Output capacitance
V
DS
= 15 V,
I
D
= 10 mA,
V
G2S
= 4 V,
f
= 1 MHz
Power gain
V
DS
= 15 V,
I
D
= 10 mA
f
= 200 MHz,
G
G
= 2 mS,
G
L
= 0.5 mS
(test circuit)
Noise figure
V
DS
= 15 V,
I
D
= 10 mA
f
= 200 MHz,
G
G
= 2 mS,
G
L
= 0.5 mS
(test circuit)
Gain control range
V
DS
= 15 V,
V
G2S
= 4 … – 2 V,
f
= 200 MHz
(test circuit)
g
fs
C
g1ss
C
g2ss
C
dg1
C
dss
G
ps
15
–
–
–
–
–
18
2.5
1.2
25
1
25
–
–
–
–
–
–
fF
pF
dB
mS
pF
Values
typ.
max.
Unit
F
–
1
–
∆
G
ps
50
–
–
BF 994 S
Total power dissipation
P
tot
=
f
(T
A
)
Output characteristics
I
D
=
f
(V
DS
)
V
G2S
= 4 V
Gate 1 forward transconductance
g
fs1
=
f
(V
G1S
)
V
DS
= 15 V,
I
DSS
= 10 mA,
f
= 1 kHz
Gate 1 forward transconductance
g
fs1
=
f
(V
G2S
)
V
DS
= 15 V,
I
DSS
= 10 mA,
f
= 1 kHz
BF 994 S
Drain current
I
D
=
f
(V
G1S
)
V
DS
= 15 V
Gate 1 input capacitance
C
g1ss
=
f
(V
G1S
)
V
G2S
= 4 V,
V
DS
= 15 V
I
DSS
= 10 mA,
f
= 1 MHz
Gate 2 input capacitance
C
g2ss
=
f
(V
G2S
)
V
G1S
= 0 V,
V
DS
= 15 V
I
DSS
= 10 mA,
f
= 1 MHz
Output capacitance
C
dss
=
f
(V
DS
)
V
G1S
= 0 V,
V
G2S
= 4 V
I
DSS
= 10 mA,
f
= 1 MHz
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