MUR3080PT, MUR30100PT
Ultra Fast Recovery Diodes
Dimensions TO-247AD
A
C(TAB)
A
C
A
C
A
Dim.
A
B
C
D
E
F
G
H
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
A=Anode, C=Cathode, TAB=Cathode
V
RSM
V
800
1000
V
RRM
V
800
1000
J
K
L
M
N
MUR3080PT
MUR30100PT
Symbol
I
FRMS
I
FAVM
I
FRM
Test Conditions
T
VJ
=T
VJM
T
C
=100
o
C; rectangular, d=0.5
t
p
<10us; rep. rating, pulse width limited by T
VJM
T
VJ
=45
o
C
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
Maximum Ratings
25
30
150
75
80
65
70
28
27
21
20
-40...+150
150
-40...+150
Unit
A
I
FSM
T
VJ
=150
o
C
T
VJ
=45
o
C
A
It
2
T
VJ
=150 C
o
A
2
s
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
T
C
=25
o
C
Mounting torque
o
C
78
0.4...0.6
2
W
Nm
g
MUR3080PT, MUR30100PT
Ultra Fast Recovery Diodes
Symbol
Test Conditions
T
VJ
=25
o
C; V
R
=V
RRM
T
VJ
=25
o
C; V
R
=0.8
.
V
RRM
T
VJ
=125
o
C; V
R
=0.8
.
V
RRM
I
F
=15A; T
VJ
=150
o
C
T
VJ
=25
o
C
For power-loss calculations only
T
VJ
=T
VJM
Characteristic Values
typ.
max.
250
150
4
2.1
2.7
1.67
33.6
1.6
0.5
60
Unit
uA
uA
mA
V
V
m
K/W
I
R
V
F
V
TO
r
T
R
thJC
R
thCK
R
thJA
t
rr
I
RM
I
F
=1A; -di/dt=50A/us; V
R
=30V; T
VJ
=25
o
C
_
V
R
=540V; I
F
=15A; -di
F
/dt=100A/us; L<0.05uH; T
VJ
=100
o
C
50
6.5
60
7.2
ns
A
FEATURES
* International standard package
JEDEC TO-247AD
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low I
RM
-values
* Soft recovery behaviour
APPLICATIONS
* Rectifiers in switch mode power
supplies (SMPS)
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
MUR3080PT, MUR30100PT
Ultra Fast Recovery Diodes
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -di
F
/dt.
Fig. 3 Peak reverse current versus
-di
F
/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -di
F
/dt.
Fig. 6 Peak forward voltage
versus di
F
/dt.
Fig. 7 Transient thermal impedance junction to case.
Embedded System
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