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BF998R

Description
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size247KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BF998R Overview

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET

BF998R Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOT-143
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage12 V
Maximum drain current (Abs) (ID)0.03 A
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BF998...
Silicon N_Channel MOSFET Tetrode
Short-channel transistor
with high S / C quality factor
For low-noise, gain-controlled
input stage up to 1 GHz
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BF998
BF998R
BF998W
SOT143
SOT143R
SOT343
1=S
1=D
1=D
2=D
2=S
2=S
3=G2
3=G1
3=G1
4=G1
4=G2
4=G2
-
-
-
-
-
-
MOs
MRs
MR
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Total power dissipation
T
S
76 °C, BF998, BF998R
T
S
94 °C, BF998W
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1)
BF998, BF998R
BF998W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Symbol
V
DS
I
D
±I
G1/2SM
P
tot
Value
12
30
10
200
200
Unit
V
mA
T
stg
T
ch
Symbol
R
thchs
-55 ... 150
150
°C
Value
370
280
Unit
K/W
1
Feb-13-2004

BF998R Related Products

BF998R BF998W
Description UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
Is it Rohs certified? conform to conform to
Parts packaging code SOT-143 SC-82
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4
Reach Compliance Code compli unknow
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 12 V 12 V
Maximum drain current (Abs) (ID) 0.03 A 0.03 A
Maximum drain current (ID) 0.03 A 0.03 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 4 4
Operating mode DUAL GATE, DEPLETION MODE DUAL GATE, DEPLETION MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 NOT SPECIFIED
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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