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MA40182-276M

Description
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size96KB,4 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

MA40182-276M Overview

SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE

MA40182-276M Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionO-LALF-G2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresMATCHED PAIR, LOW NOISE
Shell connectionISOLATED
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandKU BAND
JESD-30 codeO-LALF-G2
maximum noise index12 dB
Number of components2
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Pulse input maximum power0.075 W
Minimum pulse input power0.5 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationAXIAL
Schottky barrier typeLOW BARRIER
Base Number Matches1
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