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SRF1630

Description
8 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size136KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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SRF1630 Overview

8 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB

CE
CHENYI ELECTRONICS
SRF1620 THRU SRF16A0
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts
Forward Current - 16.0Amperes
FEATURES
. Plastic package has Underwriters Laboratory Flammability Classification 94V-0
. Metal sliicon junction ,majority carriet conduction
. Guard ring for overcoltage protection
. Low power loss,high efficiency
. High current capability ,Low forward voltage drop
. High surge capability
. For use in low voltage ,high frequency inverters,
free wheeling , and polarilty protection applications
. Dual rectifier construction
. High temperature soldering guaranteed: 250 /10 seconds
0.25"(6.35mm)from case
MECHANICAL DATA
.
Case:
JEDEC DO-220AB molded plastic body
.
Terminals:
lead solderable per MIL-STD-750,method 2026
.
Polarity:
As marked. No suffix indicates Common Cathode, suffix"A"
indicates Common Anode
.
Mounting Position:
Any
.
Weight:
0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified,Single phase,half wave,resistive or inductive)
load. For capacitive load,derate by 20%)
Symbols SRF1620 SRF1630 SRF1640 SRF1650 SRF1660 SRF1680 SRF16A0 Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Macimum average forward rectified
current(see Fig.1)
Repetitive peak forward current(square wavr,
20KHz) at Tc=105
Peak forward surge current 8.3ms singel half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage at 10 A(Note 1)
Maximum instantaneous reverse
current at rated DC blocking voltage(Note 1)
Typeical thermal resistance(Note 2)
Operating junction temperature range
storage temperature range
TA=25
TA=125
V
F
I
R
30
50
5.0
-65 to +125
-65 to +150
-65 to +150
/W
0.65
1.0
mA
0.75
0.80
0.85
Volts
I
FSM
150.0
Amps
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
16.0
60
42
60
80
57
80
100
71
100
Volts
Volts
Volts
Amps
I
FRM
32.0
Amps
R
T
J
T
STG
JC
Notes:
1. Pulse test: 300
s
pulse width,1% duty cycle
2.Thermal resistance from juntion to case
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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