Ge-Avalanche Photodiode with Pigtail
SRD 00514X
SRD 00515X
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Designed for application in fiber-optic communication
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systems
Sensitive receiver for the 2
nd
optical window (1300 nm)
High gain-bandwidth product
Suitable for bit rates up to 1.2 Gbit/s and long-haul
transmission
Planar structure
Small radiant sensitive area
Low multiplied dark current
High spectral sensitivity by built-in optics
Hermetically sealed 3-pin metal case
With optimally coupled multimode-fiber pigtail
Ordering Code
Q62702-Pxxxx
Q62702-Pxxxx
Connector/Flange
Pigtail, FC/PC-connector
Pigtail with flange,
FC/PC-connector
Type
SRD 00514H
SRD 00515H
Component with other connector types on request.
Maximum Ratings
Parameter
Forward current
Reverse voltage
Operating and storage temperature
Max. radiant power into the opt. port
(
V
R
= 5 V)
Soldering time (wave / dip soldering), distance
between solder point and baseplate
(≥ 2 mm, 260 °C)
* Individual value of
V
BR
is delivered with each component.
Symbol
Values
50
*
−
40
…
+ 85
1
10
Unit
mA
V
°C
mW
s
I
F
V
R
T
A
T
stg
Φ
port
t
s
Semiconductor Group
1
02.95
SRD 00514X
SRD 00515X
Characteristics
All optical data refer to an optimally coupled 10/125
µm
SM fiber at ambient temperature of
25 °C, unless otherwise defined.
Parameter
Spectral sensitivity
λ
= 1310 nm,
M
= 1
Rise and fall time (10 % - 90 %)
R
L
= 50
Ω,
M
= 1,
λ
= 1310 nm,
Φ
port
= 100
µW
Multiplication factor at
V
R
= 0.9
V
BR
Breakdown voltage
I
R
= 100
µA
Total capacitance
V
R
= 0.9
V
BR
,
Φ
port
= 0,
f
= 1 MHz
Dark current
V
R
= 10 V
V
R
= 0.9
V
BR
Multiplied dark current (
M
= 10)
Rel. Spectral Sensitivity
M
= 1 (
V
R
= 10 V)
Symbol
Values
0.8 (≥ 0.7)
0.3 (≤ 0.5)
4 (≥ 3)
28
…
40
≤
2
< 200
< 300
≤
20
V
pF
nA
nA
nA
Unit
A/W
ns
S
λ
t
r
;
t
f
M
V
BR
C
I
D
I
DM
Dark Current
I
D
=
I
D
(
V
R
/
V
BR
)
Multiplication Factor
M
=
M
(
V
R
/
V
BR
)
1
100
0.8
10
Rel. Sensitivity
0.6
ID in uA / M
M
ID
0.4
1
0.2
0
800
0.1
1000
1200
1400
1600
0
0.2
0.4
0.6
0.8
1
Wavelength in nm
VR/VBR
Semiconductor Group
2
SRD 00514X
SRD 00515X
Frequency Response of Sensitivity
S
=
S
(
f
),
λ
= 1300 nm
0
-1
-2
-3
Sensitivity in dB
-4
-5
-6
-7
M=2
M=8
Temperatur Behaviour of Breakdown
Voltage
V
BR
/
V
BR(25 °C)
(
T
A
)
1.1
1.05
VBR/VBR(25)
M=16
1
0.95
-8
-9
-10
100
Frequency in MHz
M=32
0.9
10000
-50
-25
0
25
50
75
100
Ambient Temperature in °C
Temperature Behaviour of Dark Current
I
D
/
I
D(25 °C)
(
T
A
)
Sensitivity at different input Powers
V
BR
/
V
BR(25 °C)
(
T
A
)
200
180
160
Sensitivity in A/W
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.00E-07
-50
-25
0
25
50
75
100
Popt in W
Ambient Temperature in °C
140
ID/ID(25)
120
100
80
60
40
20
0
1.00E-05
1.00E-03
Semiconductor Group
3
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