Semiconductor
SRC1212S
NPN Silicon Transistor
Descriptions
•
Switching application
•
Interface circuit and driver circuit application
Features
•
•
•
•
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
High packing density
Ordering Information
Type NO.
SRC1212S
Marking
RCB
Package Code
SOT-23
Outline Dimensions
2.4±0.1
1.30±0.1
unit :
mm
•
Equivalent Circuit
C(OUT)
1
1.90 Typ.
3
2
2.9±0.1
B(IN)
R
1
R
1
= 100KΩ
Ω
0.4 Typ.
0.45~0.60
E(COMMON)
0.2 Min.
1.12 Max.
0.38
0~0.1
0.124
-0.03
+0.05
PIN Connections
1. Base
2. Emitter
3. Collector
KSR-2040-000
1
SRC1212S
Absolute maximum ratings
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
(Ta=25°C)
°
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Ratings
50
50
5
100
200
150
-55 ~ 150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistance
(Ta=25°C)
°
Symbol
I
CBO
I
EBO
h
FE
V
CE(SAT)
f
T
*
R
1
Test Condition
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
-
Min. Typ. Max.
-
-
120
-
-
-
-
-
-
0.1
250
100
500
500
-
0.3
-
-
Unit
nA
nA
-
V
MHz
KΩ
* : Characteristic of Transistor Only
Electrical Characteristic Curves
Fig. 1 h
FE
- I
C
Fig. 2 V
CE(SAT)
- I
C
KSR-2040-000
2
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