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BFG410W

Description
NPN 22 GHz wideband transistor
CategoryDiscrete semiconductor    The transistor   
File Size82KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BFG410W Overview

NPN 22 GHz wideband transistor

BFG410W Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
Maximum collector current (IC)0.012 A
ConfigurationSingle
Minimum DC current gain (hFE)50
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.054 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
DISCRETE SEMICONDUCTORS
BFG410W
NPN 22 GHz wideband transistor
Product specification
Supersedes data of 1997 Oct 29
File under Discrete Semiconductors, SC14
1998 Mar 11

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BFG410W BFG410
Description NPN 22 GHz wideband transistor NPN 22 GHz wideband transistor
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