BIPOLARICS, INC.
Part Number B30V2240
NPN SILICON MICROWAVE POWER TRANSISTORS
PRODUCT DATA SHEET
FEATURES:
DESCRIPTION AND APPLICATIONS:
•
High Gain Bandwidth Product
f = 6.0 GHz typ @ I
C
= 500 mA
t
•
•
High Gain
G
PE
=
9.0 dB @ 1.0 GHz
Dice, 6 Lead Flange, Pill, and Ceramic
package available
Bipolarics' B30V2240 Series are high performance silicon
bipolar transistors intended for medium and high power ,
linear and CW applications to 1.0 GHz. High f
t
and high
breakdown voltages make the B30V2240 Series an excellent
choice for many 12V and 24V communication systems. A
wide range of packages are avalable to permit CATV and
instrumentation amplifiers as well as pre-drivers, drivers and
final amplifiers in transmitter applications.
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
UNITS
PERFORMANCE DATA:
•
Electrical Characteristics (T
A
= 25
o
C)
SYMBOL
PARAMETERS & CONDITIONS
V
CES
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
50
30
3.5
800
200
-65 to 200
V
V
V
mA
o
C
o
C
UNIT
MIN.
TYP.
MAX.
V
CE
= 24V, I
C
= 550 mA, Class A,Common Emitter unless stated
P
1dB
P
1dB
G
PE
Output Power at 1dB compression
Class C Common Base
f = 1.0 GHz
f = 1.0 GHz
W
W
4.0
8.0
Class A
f = 1.0 GHz
dB
9.0
η
h
FE
C
CB
Efficiency:
Class A
Class C
f = 1.0 MHz
%
30
65
20
40
100
Forward Current Transfer Ratio:
V
CE
= 8.0V, I
C
= 100 mA
Collector Base Capacitance:
f = 1.0 MHz
I
E
= 0
pF
9.0
P
T
Total Power Dissipation
W
13
BIPOLARICS, INC
-22 220 mil Pill Package
45
PAGE
2
Part Number B30V2240
-28 280 mil Pill Package
45
SILICON MICROWAVE POWER TRANSISTOR
4
0.0787
(2.000)
4
1
0.9375
(23.81)
0.225
(5.71)
1
3
1.030
(26.16)
3
0.0315
(0.800)
0.005
( 0.13 )
2
2
0.220
(5.590)
0.0625
(1.5875)
0.11
(2.80)
0.055 0.005
(1.40) (0.13 )
0.280 DIA
(7.11 DIA)
0.13
(3.30)
-
50 Ceramic 4 Lead PAK Surface Mount
.125
(3.175)
-18 Ceramic SO8 Package
.115
(2.921)
Base
.050
Emitter
(1.27)
.050
(1.27)
.250 .140
(6.35)(3.556)
Emitter
.050
(1.27)
.020
(.508)
Base
.090
(2.286)
Base
Emitter
.050
(1.27)
.160
(4.064)
.070
(1.778)
Collector
Emitter
Collector
Collector
Emitter
.250
(6.35)
.560
(14.224)
.050
(1.27)
Emitter
.190
(4.826)
NOTES:
(unless otherwise specified)
in
1. Dimensions are (mm)
2. Tolerances:
in .xxx =
±
.005
mm .xx =
±
.13
3. All dimensions nominal; subject to change
without notice
LEAD
220&280 mil Pill
Package
Emitter
1
base
2
3
4
Emitter Collector
PAGE
3
BIPOLARICS, INC
Part Number B30V2240
SILICON MICROWAVE POWER TRANSISTOR
-36 230 mil x 360 mil 6 Lead Flange Package
.0.360
(9.144)
-38 380 mil RD 6 Lead Flange Package
0.205
(5.207)
0.12
(3.048)
0.045
(1.143)
0.12
(3.048)
0.065
(1.651)
45
0
3
2
1
6
0.430 0.230
(10.92) (5.842)
5
4
0.25
(6.35)
0.94
(23.88)
1
2
0.725
(18.42)
0.975
(24.77)
3
4
0.115
(2.921)
5
0.07
(1.778)
0.725
(18.42)
6
0.25
(6.35)
0.005
(0.127)
0.170 0.125
(4.318) (3.175)
0.109
(2.769)
0.005
(0.127)
0.17
(4.318)
0.380
(9.652)
0.1
(2.54)
0.29
(7.366)
0.725
(18.42)
0.970
(24.64)
LEAD
1
2
3
4
5
6
Drawings are not to scale.
- 36 & -38 Emitter Base Emitter Emitter Collector Emitter
Package
NOTES:
(unless otherwise specified)
in
1. Dimensions are
(mm)
2. Tolerances:
in .xxx =
±
.005
mm .xx =
±
.13
3. All dimensions nominal; subject to change
without notice
BIPOLARICS INC.
108 Albright Way, Los Gatos Business Park
Los Gatos, CA 95030
Phone: (408) 379-4543
FAX: (408)379-0918
Microchip MCU
京公网安备 11010802033920号
EEWORLD
