NPN Silicon High-Voltage Transistor
q
Suitable for video output stages in TV sets
q
q
q
q
BFN 20
and switching power supplies
High breakdown voltage
Low collector-emitter saturation voltage
Low capacitance
Complementary type: BFN 21 (PNP)
Type
BFN 20
Marking
DC
Ordering Code
(tape and reel)
Q62702-F1058
Pin Configuration
1
2
3
B
C
E
Package
1)
SOT-89
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage,
R
BE
= 2.7 kΩ
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation,
T
S
= 120 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
90
≤
30
Symbol
V
CE0
V
CB0
V
CER
V
EB0
I
C
I
CM
P
tot
T
j
T
stg
Values
300
300
300
5
50
100
1
150
– 65 … + 150
Unit
V
mA
W
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
BFN 20
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA
Collector-base breakdown voltage
I
C
= 10
µ
A
Collector-emitter breakdown voltage
I
C
= 10
µ
A,
R
BE
= 2.7 kΩ
Emitter-base breakdown voltage
I
E
= 10
µ
A
Collector-base cutoff current
V
CB
= 250 V
V
CB
= 250 V,
T
A
= 150 ˚C
Collector cutoff current
V
CE
= 300 V,
R
BE
= 2.7 kΩ
V
CE
= 300 V,
T
A
= 150 ˚C,
R
BE
= 2.7 kΩ
Emitter-base cutoff current
V
EB
= 5 V
DC current gain
1)
I
C
= 25 mA,
V
CE
= 20 V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
AC characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 10 V,
f
= 20 MHz
Output capacitance
V
CB
= 30 V,
f
= 1 MHz
f
T
C
obo
–
–
100
0.8
–
–
MHz
pF
V
(BR)CE0
V
(BR)CB0
V
(BR)CER
V
(BR)EB0
I
CB0
–
–
I
CER
–
–
I
EB0
h
FE
V
CEsat
V
BEsat
–
40
–
–
–
–
–
–
–
–
1
50
10
–
0.5
1
–
V
–
–
100
20
nA
µ
A
µ
A
Values
typ.
max.
Unit
300
300
300
5
–
–
–
–
–
–
–
–
V
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
2
Embedded System
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