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BFP182R

Description
NPN Silicon RF Transistor
CategoryDiscrete semiconductor    The transistor   
File Size87KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BFP182R Overview

NPN Silicon RF Transistor

BFP182R Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionCOLLECTOR
Maximum collector current (IC)0.035 A
Collector-based maximum capacity0.4 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
highest frequency bandL BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)8000 MHz
Base Number Matches1
BFP182R
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
f
T
= 8 GHz
F
= 1.2 dB at 900 MHz
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
2)
R
thJS
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA



ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFP182R
Maximum Ratings
Parameter
Marking
RGs
1=E
Pin Configuration
2=C
3=E
4=B
Package
SOT143R
Unit
V
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Value
12
20
20
2
35
4
250
150
-65 ... 150
-65 ... 150
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
S
69 °C
1)
mA
mW
°C

325
K/W
1
Aug-09-2001
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