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WS512K32F-55G4M

Description
SRAM Module, 2MX8, 55ns, CMOS,
Categorystorage    storage   
File Size413KB,10 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

WS512K32F-55G4M Overview

SRAM Module, 2MX8, 55ns, CMOS,

WS512K32F-55G4M Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Reach Compliance Codeunknown
Maximum access time55 ns
Other featuresCONFIGURABLE AS 512K X 32
Spare memory width16
I/O typeCOMMON
JESD-30 codeS-XQMA-F68
JESD-609 codee0
memory density16777216 bit
Memory IC TypeSRAM MODULE
memory width8
Number of functions1
Number of terminals68
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize2MX8
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeQFF
Encapsulate equivalent codeQFL68,1.56SQ
Package shapeSQUARE
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum standby current0.012 A
Minimum standby current2 V
Maximum slew rate0.52 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
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