DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ149
PNP 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
DESCRIPTION
PNP transistor in a SOT89 envelope.
It is intended for use in
UHF applications such as broadband
aerial amplifiers (30 to 860 MHz) and
in microwave amplifiers such as radar
systems, spectrum analyzers, etc.,
using SMD technology.
PINNING
PIN
1
2
3
DESCRIPTION
Code: FG
emitter
collector
base
1
Bottom view
2
fpage
BFQ149
3
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
P
tot
h
FE
f
T
G
UM
F
PARAMETER
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
up to T
s
= 135
°C
(note 1)
I
C
=
−75
mA; V
CE
=
−10
V;
f = 500 MHz; T
j
= 25
°C
I
C
=
−50
mA; V
CE
=
−10
V;
f = 500 MHz; T
amb
= 25
°C
I
C
=
−50
mA; V
CE
=
−10
V;
R
s
= 60
Ω;
f = 500 MHz;
T
amb
= 25
°C
open base
CONDITIONS
MIN.
−
−
−
4
−
−
I
C
=
−70
mA; V
CE
=
−10
V; T
j
= 25
°C
20
TYP.
−
−
−
50
5
12
3.75
MAX.
−15
−100
1
−
−
−
−
GHz
dB
dB
UNIT
V
mA
W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
f
>
1 MHz
up to T
s
= 135
°C
(note 1)
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
−65
−
MIN.
MAX.
−20
−15
−3
−100
−150
1
150
150
UNIT
V
V
V
mA
mA
W
°C
°C
September 1995
2
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
F
PARAMETER
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
CONDITIONS
I
E
= 0; V
CB
=
−10
V;
I
C
=
−70
mA; V
CE
=
−10
V
I
C
=
−70
mA; V
CE
=
−10
V;
f = 500 MHz; T
amb
= 25
°C
I
E
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= 0; V
EB
=
−0.5
V; f = 1 MHz
I
C
= 0; V
CE
=
−10
V; f = 1 MHz
I
C
=
−50
mA; V
CE
=
−10
V;
f = 500 MHz; T
amb
= 25
°C
I
C
=
−50
mA; V
CE
=
−10
V;
R
s
= 60
Ω;
f = 500 MHz;
T
amb
= 25
°C
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 135
°C
(note 1)
BFQ149
THERMAL RESISTANCE
40 K/W
MIN. TYP. MAX.
−
20
4
−
−
−
−
−
−
50
5
2
4
1.7
12
3.75
100
−
−
−
−
−
−
−
UNIT
nA
GHz
pF
pF
pF
dB
dB
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-
=
10 log
-------------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2
September 1995
3
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFQ149
MEA328
handbook, halfpage
4
handbook, halfpage
8
MBB347
Cc
(pF)
3
fT
(GHz)
6
2
4
1
2
0
0
10
V CB (V)
20
0
0
50
I C (mA)
100
I
E
= 0; f = 1 MHz; T
j
= 25
°C.
V
CE
=
−10
V; f = 500 MHz; T
amb
= 25
°C.
Fig.2
Collector capacitance as a function of
collector-base voltage.
Fig.3
Transition frequency as a function of
collector current.
MBB345
handbook, halfpage
80
MEA329
handbook, halfpage
40
h FE
60
G UM
(dB)
30
40
20
20
10
0
0
100
I C (mA)
200
0
10
10
2
10
3
f (MHz)
10
4
V
CE
=
−10
V; T
j
= 25
°C.
I
c
=
−50
mA; V
CE
=
−10
V; T
amb
= 25
°C.
Fig.4
DC current gain as a function of collector
current.
Fig.5
Maximum unilateral power gain as a
function of frequency.
September 1995
4
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
BFQ149
SOT89
D
B
A
b3
E
HE
L
1
2
b2
3
c
w
M
b1
e
1
e
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.6
1.4
b1
0.48
0.35
b2
0.53
0.40
b3
1.8
1.4
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
e
3.0
e1
1.5
HE
4.25
3.75
L
min.
0.8
w
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
September 1995
5
京公网安备 11010802033920号
EEWORLD
