3 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD
| Parameter Name | Attribute value |
| Maker | JGD（Jinan Gude Electronic Device） |
| package instruction | O-PALF-W2 |
| Reach Compliance Code | unknow |
| Other features | HIGH RELIABILITY |
| application | GENERAL PURPOSE |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 0.75 V |
| JEDEC-95 code | DO-201AD |
| JESD-30 code | O-PALF-W2 |
| Maximum non-repetitive peak forward current | 80 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 3 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum repetitive peak reverse voltage | 60 V |
| Maximum reverse current | 1000 µA |
| surface mount | NO |
| technology | SCHOTTKY |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| SR306 | SR310 | SR308 | SR305 | SR304 | SR303 | SR302 | |
|---|---|---|---|---|---|---|---|
| Description | 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 80 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
| Maker | JGD（Jinan Gude Electronic Device） | - | JGD（Jinan Gude Electronic Device） | JGD（Jinan Gude Electronic Device） | JGD（Jinan Gude Electronic Device） | JGD（Jinan Gude Electronic Device） | JGD（Jinan Gude Electronic Device） |
| package instruction | O-PALF-W2 | - | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | - |
| Reach Compliance Code | unknow | - | unknow | unknow | unknow | unknown | unknow |
| Other features | HIGH RELIABILITY | - | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| application | GENERAL PURPOSE | - | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE |
| Shell connection | ISOLATED | - | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | - | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 0.75 V | - | 0.85 V | 0.75 V | 0.55 V | 0.55 V | 0.55 V |
| JEDEC-95 code | DO-201AD | - | DO-201AD | DO-201AD | DO-201AD | DO-201AD | DO-201AD |
| JESD-30 code | O-PALF-W2 | - | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 |
| Maximum non-repetitive peak forward current | 80 A | - | 80 A | 80 A | 80 A | 80 A | 80 A |
| Number of components | 1 | - | 1 | 1 | 1 | 1 | 1 |
| Phase | 1 | - | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | - | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 125 °C | - | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -65 °C | - | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
| Maximum output current | 3 A | - | 3 A | 3 A | 3 A | 3 A | 3 A |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | - | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | - | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Maximum repetitive peak reverse voltage | 60 V | - | 80 V | 50 V | 40 V | 30 V | 20 V |
| Maximum reverse current | 1000 µA | - | 1000 µA | 1000 µA | 1000 µA | 1000 µA | 1000 µA |
| surface mount | NO | - | NO | NO | NO | NO | NO |
| technology | SCHOTTKY | - | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY |
| Terminal form | WIRE | - | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | - | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
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