SEMICONDUCTOR
NKT160A/NKH160A Series
Thyristor
/
Diode and Thyristor
/
Thyristor, 160A
(
New INT
-
A
-
PAK Power Modules
)
RoHS
RoHS
N
ell
High Power Products
24
23
23
2.8x0.8+0.1
34+2
-
New INT
-
A
-
PAK
12+1
-
2−Ø6.5
15+1
3-M6 SCREWS
FEATURES
•
High voltage
•
Electrically isolated by DBC ceramic
(
AI
2
O
3
)
• 3500
V
RMS
isolating voltage
36+2
-
80+1
94+1
•
High surge capability
•
Glass passivated chips
•
Modules uses high voltage power thyristor
/
diodes in two
basic configurations
•
Simple mounting
•
UL approved file E320098
•
Compliant to RoHS
•
Designed and qualified for multiple level
29+1
-
All dimensions in millimeters
NKT
+
~
-
~
NKH
+
-
APPLICATIONS
•
DC motor control and drives
•
Battery charges
•
Welders
•
Power converters
•
Lighting control
•
Heat and temperature control
~
+
-
0.8
9
7+0.5
•
Industrial standard package
K2 G2
K1 G1
~
+
-
K1G1
PRODUCT SUMMARY
I
T(AV)
160 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
√
t
V
DRM
/ V
RRM
T
J
Range
Range
CHARACTERISTICS
85 ° C
85 ° C
50 Hz
60 Hz
50 Hz
60 Hz
VALUE
160
251
5400
5670
146
133
1458
400 to 1600
-40 to 125
kA
2
√s
V
° C
kA
2
s
A
UNITS
A
www.nellsemi.com
Page 1 of 4
SEMICONDUCTOR
NKT160A/NKH160A Series
RoHS
RoHS
N
ell
High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
04
NKT160
NKH160
08
12
14
16
V
RRM
/V
DRM
,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1400
1600
V
RSM
/V
DSM
,
MAXIMUM NON
-
REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1500
1700
20
I
RRM
/I
DRM
AT
125 °
C
mA
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle, on-state
non-repetitive surge current
SYMBOL
I
T(AV)
l
T(RMS)
I
TSM
TEST CONDITIONS
180° conduction, half sine wave ,50Hz
180° conduction, half sine wave ,50Hz ,T
C
= 85
°
C
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√
for fusing
t
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
2
t
I
√
VALUE
160
85
251
5400
UNITS
A
°C
A
No voltage
reapplied
5670
Sine half wave,
initial T
J
=
T
J
maximum
146
133
102
93
1458
1.7
V
1.4
40~150
400
mA
kA
2
√s
kA
2
s
100%V
RRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
I
TM
= 480A , T
J
= 25 ° C, 180° conduction
I
FM
= 480A, T
J
= 25 ° C, 180° conduction
Anode supply = 6 V initial I
T
= 30 A, T
J
= 25 ° C
Anode supply = 6 V resistive load = 1
Gate pulse: 10 V, 100 s, T
J
= 25 ° C
V
TM
V
FM
I
H
I
L
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
I
RRM
,
I
DRM
V
ISO
dV/dt
T
J
= 125 ° C
50 Hz, circuit to base,
all terminals shorted
T
J
= T
J
maximum,
exponential to 67 % rated V
DRM
TEST CONDITIONS
VALUES
20
2500 (1min)
3500 (1s)
800
UNITS
mA
V
V/ s
www.nellsemi.com
Page 2 of 4
SEMICONDUCTOR
NKT160A/NKH160A Series
RoHS
RoHS
N
ell
High Power Products
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GT
V
GT
T
J
= 25 ° C
I
GT
V
GD
T
J
= T
J
maximum, 66.7% V
DRM
applied
I
GD
dI/dt
T
J
= 25ºC
,I
GM
= 1.5A ,t
r
≤
0.5 µs
10
150
mA
A/ s
Anode supply = 6 V,
resistive load; R
a
= 1
30~150
mA
V
t
p
≤
5 ms, T
J
= T
J
maximum
TEST CONDITIONS
t
p
≤
5 ms, T
J
= T
J
maximum
f = 50 Hz, T
J
= T
J
maximum
VALUES
10
3
3
10
V
0.7~1.8
UNITS
W
A
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to ca se per junction
Maximum thermal resistance,
case to heatsink per module
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth , flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
TEST CONDITIONS
VALUES
- 40 to 125
°C
- 40 to 150
0.17
° C/W
0.055
UNITS
Mounting
torque ± 10 %
IAP to heatsink , M6
busbar to IAP , M6
4 to 6
N.m
Approximate weight
220
7.05
g
oz.
Case style
New INT-A-PAK
ORDERING INFORMATION TABLE
Device code
NKT
1
160
2
/
16
3
A
4
1
2
3
4
-
-
-
-
Module type: NKT for (Thyristor + Thyristor) module
NKH for (Thyristor + Diode) module
Current rating
:
I
T
(
AV
)
Voltage code x
100 =
V
RRM
Assembly type,”A” for soldering type
www.nellsemi.com
Page 3 of 4
SEMICONDUCTOR
NKT160A/NKH160A Series
RoHS
RoHS
N
ell
High Power Products
Fig.1 On-state current vs. voltage characteristic
5
Fig.2 Transient thermal impedance(junction-case)
On-state peak voltage (V)
4.3
Transient thermal impedance (° C/W)
0.18
T
J
= 125
°
C
0.15
3.6
0.12
2.9
0.09
2.2
0.06
1.5
0.03
0.00
0.8
100
1000
10000
0.001
0.01
0.1
Time (s)
1
10
On-state current (A)
Fig.3 Power consumption vs. average current
400
Fig.4 Case temperature vs. on-state average current
140
Maximum power consumption (W)
350
300
250
200
150
100
50
0
0
50
100
150
200
On-state average current (A)
0
180
120°
90°
60°
30°
ase temperature (° C)
180°
120
0
180
100
Conduction Angle
Conduction Angle
80
60
40
20
0
0
50
100
150
200
250
300
30°
60°
90°
120°
180°
On-state average current (A)
Fig.5 On-state surge current vs cycles
6
2
10
1
Fig.6 Gate characteristics
On-state surge current (KA)
Peak Forward Gate Voltage (10V)
Pe
Po ak
Av
we Ga
r ( te
Po era
10
we ge
w)
r( G
at
3w
) e
5
Gate voltage (V)
4
2
10
0
5
125
°
C 25
°
C
-30°C
3
2
2
1
1
10
100
10
-1
10
1
2
Maximum Gate Voltage that will not trigger any unit
5
10
2
2
5
10
3
Peak Gate Current (3A)
5
2
5
Cycles @50Hz
Gate current (mA)
Page 4 of 4
www.nellsemi.com
京公网安备 11010802033920号
EEWORLD
