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NM27C512QE150

Description
64K X 8 UVPROM, 150 ns, CDIP28
Categorystorage    storage   
File Size157KB,10 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
Stay tuned Parametric

NM27C512QE150 Overview

64K X 8 UVPROM, 150 ns, CDIP28

NM27C512QE150 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNational Semiconductor(TI )
package instructionWINDOWED, CERAMIC, DIP-28
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time150 ns
I/O typeCOMMON
JESD-30 codeR-GDIP-T28
JESD-609 codee0
memory density524288 bi
Memory IC TypeUVPROM
memory width8
Number of functions1
Number of terminals28
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX8
Output characteristics3-STATE
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeWDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE, WINDOW
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Maximum seat height5.715 mm
Maximum standby current0.0001 A
Maximum slew rate0.04 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width15.24 mm
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