NM27P512N150 datasheet, PDF - EEWORLD Datasheet

NM27P512N150: Description524,288-Bit (64K x 8) Processor Oriented CMOS EPROM; Categorystorage storage; File Size176KB，12 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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NM27P512N150 Overview

524,288-Bit (64K x 8) Processor Oriented CMOS EPROM

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	DIP, DIP28,.6
Reach Compliance Code	unknow
ECCN code	EAR99
Is Samacsys	N
Maximum access time	150 ns
I/O type	COMMON
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
length	35.725 mm
memory density	524288 bi
Memory IC Type	OTP ROM
memory width	8
Number of functions	1
Number of terminals	28
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	5.334 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15.24 mm
Base Number Matches	1

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