2048-BIT / 4096-BIT SERIAL ELECTRICALLY ERASABLE PROGRMMABLE MEMORIES
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | National Semiconductor（TI ） |
| package instruction | DIP, DIP8,.3 |
| Reach Compliance Code | unknow |
| ECCN code | 3A001.A.2.C |
| Maximum clock frequency (fCLK) | 0.5 MHz |
| Data retention time - minimum | 40 |
| Durability | 100000 Write/Erase Cycles |
| JESD-30 code | R-PDIP-T8 |
| JESD-609 code | e0 |
| length | 9.817 mm |
| memory density | 2048 bi |
| Memory IC Type | EEPROM |
| memory width | 16 |
| Number of functions | 1 |
| Number of terminals | 8 |
| word count | 128 words |
| character code | 128 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 128X16 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP8,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | SERIAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum seat height | 5.08 mm |
| Serial bus type | MICROWIRE |
| Maximum standby current | 0.0001 A |
| Maximum slew rate | 0.004 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 7.62 mm |
| Maximum write cycle time (tWC) | 10 ms |
| write protect | HARDWARE/SOFTWARE |
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