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BFQ31

Description
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)
CategoryDiscrete semiconductor    The transistor   
File Size125KB,1 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

BFQ31 Overview

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

BFQ31 Parametric

Parameter NameAttribute value
MakerKEC
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-based maximum capacity3 pF
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)600 MHz
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