SQ3019F datasheet, PDF - EEWORLD Datasheet

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SQ3019F: Description1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5; Categorysemiconductor Discrete semiconductor; File Size26KB，1 Pages; ManufacturerSemicoa; Websitehttp://www.snscorp.com/Semicoa.htm

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SQ3019F Overview

1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5

SQ3019F Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	1 A
Maximum Collector-Emitter Voltage	80 V
Processing package description	TO-5, 3 PIN
state	ACTIVE
packaging shape	round
Package Size	cylindrical
Terminal form	Wire
terminal coating	tin lead
Terminal location	BOTTOM
Packaging Materials	Metal
structure	single
Number of components	1
Transistor component materials	silicon
Transistor type	Universal small signal
Minimum DC amplification factor	100
Rated crossover frequency	100 MHz

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Data Sheet No. 2C3019

Chip Type 2C3019

Geometry 4500

Polarity PNP

Generic Packaged Parts:

2N3019, 2N3057

Chip type

2C3019

by Semicoa Semi-

conductors provides performance

similar to these devices.

Part Numbers:

2N3019, 2N3019S,

2N3019UB, 2N3057,

2N3057A,

2N3700, 2N3700UB,

SD3019F, SQ3019, SQ3019F

Product Summary:

APPLICATIONS:

Designed for general

purpose switching and amplifier applica-

tions.

Features:

Radiation graphs available

Mechanical Specifications

Metallization

Bonding Pad Size

Die Thickness

Chip Area

Top Surface

Top

Backside

Emitter

Base

Al - 12 kÅ min.

Au - 6.5 kÅ nom.

2.3 mils x 7.0 mils

5.0 mils x 11.0 mils

8 mils nominal

30 mils x 30 mils

Silox Passivated

Electrical Characteristics

T

A

= 25

o

C

Parameter

BV

CBO

BV

EBO

I

CBO

Test conditions

I

C

= 100 µA, I

E

= 0

I

E

= 100 µA, I

C

= 0

V

CB

= 40 V, I

E

= 0

Min

140

7.0

---

Max

---

10

Unit

V dc

nA

h

FE

I

C

= 150 mA dc, V

CE

= 10 V

100

300

---

Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less

than 300 µs, duty cycle less than 2%.

SQ3019F Related Products

	SQ3019F	2N3019UB	SD3019F
Description	1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5	1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5	1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
Number of terminals	3	3	3
Transistor polarity	NPN	NPN	NPN
Maximum collector current	1 A	1 A	1 A
Maximum Collector-Emitter Voltage	80 V	80 V	80 V
Processing package description	TO-5, 3 PIN	TO-5, 3 PIN	TO-5, 3 PIN
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	round	round	round
Package Size	cylindrical	cylindrical	cylindrical
Terminal form	Wire	Wire	Wire
terminal coating	tin lead	tin lead	tin lead
Terminal location	BOTTOM	BOTTOM	BOTTOM
Packaging Materials	Metal	Metal	Metal
structure	single	single	single
Number of components	1	1	1
Transistor component materials	silicon	silicon	silicon
Transistor type	Universal small signal	Universal small signal	Universal small signal
Minimum DC amplification factor	100	100	100
Rated crossover frequency	100 MHz	100 MHz	100 MHz

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