BFR360T
NPN Silicon RF Transistor
Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz
3
2
1
VPS05996
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFR360T
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
T
S
81°C
Marking
FBs
Pin Configuration
1=B
2=E
3=C
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Value
6
15
15
2
35
4
210
150
-65 ... 150
-65 ... 150
Value
325
Package
SC75
Unit
V
mA
mW
°C
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1
Unit
K/W
Jun-16-2003
BFR360T
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 15 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 15 mA,
V
CE
= 3 V
h
FE
60
130
200
-
I
EBO
-
-
1
µA
I
CBO
-
-
100
nA
I
CES
-
-
10
µA
V
(BR)CEO
6
9
-
V
typ.
max.
Unit
2
Jun-16-2003
BFR360T
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 15 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz, emitter grounded
Collector emitter capacitance
V
CE
= 5 V,
f
= 1 MHz, base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz, collector grounded
Noise figure
I
C
= 3 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
Transducer gain
|S
21e
|
2
,
-
,
-
IP
3
-
8
25
-
-
dBm
12
-
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
f
= 1.8 GHz
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
f
= 3 GHz
V
CE
= 3 V,
I
C
= 15 mA,
f
= 1.8 GHz,
1dB Compression point at output
G
ma
-
-
13.5
9.5
-
-
dB
F
min
-
1
-
dB
C
eb
-
0.4
-
C
ce
-
0.2
-
C
cb
-
0.34
0.5
pF
10
14
-
Unit
GHz
Third order intercept point at output
2)
Z
S
=
Z
L
= 50
1
G
1/2
ma
= |S
21e
/
S
12e
| (k-(k²-1) )
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
f
= 1.8 GHz
P
-1dB
,
-
9
-
from 0.1 MHz to 6 GHz
3
Jun-16-2003
BFR360T
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
fF
ps
mA
V
ns
-
-
-
-
deg
-
fF
-
-
V
fF
-
V
eV
K
1
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
C
4
C
1
L
2
B
L
3
C
B’
Transistor
Chip
E’
C’
L
1
=
L
2
=
L
3
=
C
1
=
C
2
=
C
3
=
C
4
=
C
5
=
C
6
=
0.762
0.706
0.382
62
84
180
7
40
48
nH
nH
nH
fF
fF
fF
fF
fF
fF
C
6
C
2
L
1
C
3
C
5
Valid up to 6GHz
E
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
EHA07524
4
Jun-16-2003
m
V
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF =
0.0689
20
2.4
60
1.4
7.31
400
9.219
1.336
0.864
1.92
0
0
fA
V
-
V
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
KF =
147
77.28
6
0.3
0.1
78.2
1.3
0.115
0
0.486
0
0
0.954
1E-14
-
mA
-
A
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
NK =
1
150
1
20
74
0.35
0.5
0.198
473
0.129
0.75
1.11
0.5
-
fA
-
fA
µA
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