DISCRETE SEMICONDUCTORS
DATA SHEET
BFR505
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures
excellent reliability.
DESCRIPTION
1
BFR505
PINNING
PIN
1
2
3
base
emitter
collector
fpage
DESCRIPTION
Code: N30
3
2
MSB003
The BFR505 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, pagers and satellite
TV tuners (SATV).
The transistor is encapsulated in a
plastic SOT23 envelope.
Top view
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
up to T
s
= 135
°C;
note 1
I
C
= 5 mA; V
CE
= 6 V
I
C
= i
c
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 2 GHz
S
21
2
F
insertion power gain
noise figure
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 2 GHz
Note
1. T
s
is the temperature at the soldering point of the collector tab.
open emitter
R
BE
= 0
CONDITIONS
MIN.
−
−
−
−
60
−
−
−
−
13
−
−
−
TYP.
−
−
−
−
120
0.3
9
17
10
14
1.2
1.6
1.9
MAX. UNIT
20
15
18
150
250
−
−
−
−
−
1.7
2.1
−
pF
GHz
dB
dB
dB
dB
dB
dB
V
V
mA
mW
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
continuous
up to T
s
= 135
°C;
note 1
open emitter
R
BE
= 0
CONDITIONS
MIN.
−
−
−
−
−
−65
−
BFR505
MAX.
20
15
2.5
18
150
150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
from junction to soldering point (note 1)
THERMAL RESISTANCE
260 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain (note 1)
CONDITIONS
I
E
= 0; V
CB
= 6 V
I
C
= 5 mA; V
CE
= 6 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 2 GHz
S
21
2
F
insertion power gain
noise figure
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 900 MHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 2 GHz
P
L1
ITO
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-
=
10 log
-------------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2
BFR505
MIN. TYP. MAX. UNIT
−
60
−
−
−
−
−
−
13
−
−
−
−
−
−
120
0.4
0.4
0.3
9
17
10
14
1.2
1.6
1.9
4
10
50
250
−
−
−
−
−
−
−
1.7
2.1
−
−
−
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
nA
output power at 1 dB gain
compression
third order intercept point
I
C
= 5 mA; V
CE
= 6 V; R
L
= 50
Ω;
T
amb
= 25
°C;
f = 900 MHz
note 2
2. I
C
= 5 mA; V
CE
= 6 V; R
L
= 50
Ω;
T
amb
= 25
°C;
f
p
= 900 MHz; f
q
= 902 MHz;
measured at f
(2p−q)
= 898 MHz and f
(2q−p)
= 904 MHz.
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505
MRA718 - 1
200
handbook, halfpage
Ptot
(mW)
150
handbook, halfpage
250
MRA719
hFE
200
150
100
100
50
50
0
0
50
100
150
Ts
(
o
C)
200
0
10
−3
10
−2
10
−1
1
10
10
2
IC (mA)
V
CE
= 6 V.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector
current.
handbook, halfpage
0.4
MRA720
12
fT
(GHz)
8
MRA721
Cre
(pF)
0.3
VCE = 6V
VCE = 3V
0.2
4
0.1
0
0
2
4
6
8
10
VCB (V)
10
−1
1
10
IC (mA)
10
2
I
c
= 0; f = 1 MHz.
T
amb
= 25
°C;
f = 1 GHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage.
Fig.5
Transition frequency as a function of
collector current.
September 1995
5
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