BFS 483
NPN Silicon RF Transistor
• For low-noise, high-gain broadband amplifier
at colector current from 2mA to 28mA
•
f
T
= 8GHz
F
= 1.2dB at 900MHz
• Two (galvanic) internal isolated
Transistors in one package
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFS 483
RHs
Q62702-F1574
1/4 = B
2/5 = E
3/6 = C
Package
SOT-363
data below is of a single transistor
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Symbol
Values
12
20
20
2
65
5
mW
450
150
- 65 ... + 150
- 65 ... + 150
°C
mA
Unit
V
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
T
S
≤
40 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤
245
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-16-1996
BFS 483
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Collector-emitter breakdown voltage
Values
typ.
max.
Unit
V
(BR)CEO
12
-
-
-
-
100
-
V
µA
-
100
nA
-
100
µA
-
1
-
50
200
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
I
CES
I
CBO
I
EBO
h
FE
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 15 mA,
V
CE
= 8 V
Semiconductor Group
2
Dec-16-1996
BFS 483
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
min.
AC Characteristics
Transition frequency
Values
typ.
max.
Unit
f
T
6
8
0.4
0.13
1
-
GHz
pF
-
0.6
-
-
dB
-
-
1.2
2
-
-
I
C
= 25 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
C
cb
C
ce
-
V
CB
= 10 V,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 10 V,
f
= 1 MHz
Emitter-base capacitance
C
eb
-
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
F
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
f
= 900 MHz
f
= 1.8 GHz
Power gain
1)
G
ms
-
19
-
I
C
= 15 mA,
V
CE
= 8 V,
f
= 900 MHz
Z
S
=
Z
Sopt,
Z
L
=
Z
Lopt
Power gain
2)
G
ma
-
|S
21e
|
2
-
-
15
9.5
-
-
12.5
-
I
C
= 15 mA,
V
CE
= 8 V,
f
= 1.8 GHz
Z
S
=
Z
Sopt,
Z
L
=
Z
Lopt
Transducer gain
I
C
= 15 mA,
V
CE
= 8 V,
Z
S
=Z
L
= 50
Ω
f
= 900 MHz
f
= 1.8 GHz
1)
G
ms
= |S
21
/S
12
|
2)
G
ma
= |S
21
/S
12
| (k-(k
2
-1)
1/2
)
Semiconductor Group
3
Dec-16-1996
京公网安备 11010802033920号
EEWORLD
