OM6501ST
OM6502ST
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-257AA PACKAGE
500 Volt, 5 And 10 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
•
•
•
•
•
•
•
Isolated Hermetic Metal Package
High Input Impedance
Low On-Voltage
High Current Capability
Fast Turn-Off
Low Conductive Losses
Available Screened to MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
The IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS
@ 25°C Unless Specified Otherwise
PART
NUMBER
OM6501ST
OM6502ST
I
C
(Cont.)
@ 90°C, A
5
10
V
(BR)CES
V
500
500
V
CE (sat)
(Typ.)
V
2.8
2.8
T
f
(Typ.)
ns
400
400
q
JC
°C/W
3.8
3.0
P
D
W
35
42
T
J
°C
150
150
3.1
SCHEMATIC
Collector
MECHANICAL OUTLINE
.420
.410
.200
.190
.045
.035
.665
.645
PACKAGE OPTIONS
.150
.140
1 2 3
C E G
.537
.527
.430
.410
.038 MAX.
Gate
.750
.500
MOD PAK
.005
Emitter
.035
.025
.100 TYP.
.120 TYP.
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
6 PIN SIP
Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 139
3.1
PRELIMINARY DATA: OM6502ST
IGBT CHARACTERISTICS
Min. Typ. Max. Units Test Conditions
500
0.25
1.0
±100
V
mA
mA
nA
V
CE
= 0
I
C
= 250 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125°C
I
GES
Gate Emitter Leakage
Current
Parameter - ON
V
GE(th)
Gate Threshold Voltage
Saturation Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
Dynamic
g
fs
C
ies
C
oes
C
res
T
d(on)
t
r
t
r(Volt)
t
f
t
cross
E
off
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Rise Time
Off Voltage Rise Time
Fall Time
Cross-Over Time
Turn-Off Losses
2.0
260
50
20
37
150
.35
.81
1.2
.95
S
pF
pF
pF
nS
nS
µS
µS
µS
mJ
V
CE
= 20 V, I
C
= 5 A
V
GE
= 0
V
CE
= 25 V
f = 1 mHz
V
CC
= 400 V, I
C
= 5 A
V
GE
= 15 V, R
g
= 47
V
CEclamp
= 400 V, I
C
= 5 A
V
GE
= 15 V, R
g
= 100
L = 0.1 mH, T
j
= 100°C
2.8
3.0
V
2.0
3.0
4.0
V
V
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 15 V, I
C
= 5 A
T
C
= 25°C
V
GE
= 15 V, I
C
= 5 A
T
C
= 100°C
g
fs
C
ies
C
oes
C
res
T
d(on)
t
r
T
d(off)
t
f
T
d(off)
t
f
t
cross
E
off
V
CE(sat)
Collector Emitter
V
GE
= ±20 V
V
CE
= 0 V
V
GE(th)
I
GES
Gate Emitter Leakage
Current
Parameter - ON
Gate Threshold Voltage
Saturation Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
Dynamic
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Delay Time
Fall Time
Cross-Over Time
Turn-Off Losses
2.5
950
140
80
150
1000
700
1500
1.2
1.5
2.0
4.0
S
pF
pF
pF
nS
nS
nS
nS
µS
µS
µS
mJ
V
CEclamp
= 350 V, I
C
= 10 A
V
GE
= 15 V, R
g
= 100
L = 180 µH, T
j
= 100°C
V
CC
= 400 V, I
C
= 10 A
V
GE
= 15 V, R
g
= 100
V
CE
= 20 V, I
C
= 10 A
V
GE
= 0
V
CE
= 25 V
f = 1 mHz
2.8
3.0
V
2.0
3.0
4.0
V
V
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 15 V, I
C
= 10 A
T
C
= 25°C
V
GE
= 15 V, I
C
= 10 A
T
C
= 100°C
V
CE(sat)
Collector Emitter
±100
nA
I
CES
Parameter - OFF
V
(BR)CES
Collector Emitter
Breakdown Voltage
Zero Gate Voltage
Drain Current
0.25
1.0
mA
mA
Min. Typ. Max. Units Test Conditions
500
V
V
CE
= 0
I
C
= 250 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125°C
V
GE
= ±20 V
V
CE
= 0 V
OM6501ST - OM6502ST
PRELIMINARY DATA: OM6501ST
IGBT CHARACTERISTICS
Parameter - OFF
V
(BR)CES
Collector Emitter
Breakdown Voltage
I
CES
Zero Gate Voltage
Drain Current
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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