OPA8550H
Infrared LED Chip
High Speed
GaAlAs/GaAlAs
1. Material
Substrate
GaAlAs (N Type) Removed
Epitaxial Layer GaAlAs (P/N Type)
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
Parameter
Forward Voltage
Reverse Voltage
Power
Wavelength
Symbol
V
F(1)
V
F(2)
V
R
P
O
λ
P
5
13
850
Min
Typ
1.1
1.6
1.7
Max
Unit
V
V
V
mW
nm
Condition
IF=10uA
IF=50mA
IR=10uA
IF=50mA
IF=50mA
2. Electrode
3. Electro-Optical
Characteristics
∆λ
45
nm
IF=50mA
Rise Time
Tr
15
ns
Fall Time
Tf
8
ns
※
Note : Power is measured by Sorter E/T system with bare chip.
4. Mechanical Data
(a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
--------------------- 18.7mil x 18.7mil
--------------------- 19.7mil x 19.7mil
--------------------- double pad
---------------------
7mil
---------------------
5.7mil
(d)
(e)
(b)
P Epi
(a)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel.
+82 63 839 1111
Fax.
+82 63 835 8259
www.auk.co.kr
N Epi
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