BDT95 datasheet, PDF - EEWORLD Datasheet

BDT95: DescriptionTransistor,; CategoryDiscrete semiconductor The transistor; File Size342KB，7 Pages; ManufacturerNorth American Philips Discrete Products Div

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BDT95 Overview

Transistor,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	North American Philips Discrete Products Div
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	10 A
Configuration	Single
Minimum DC current gain (hFE)	20
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	90 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	4 MHz

	BDT95	BDT91
Description	Transistor,	Transistor,
Is it Rohs certified?	incompatible	incompatible
Maker	North American Philips Discrete Products Div	North American Philips Discrete Products Div
Reach Compliance Code	unknown	unknown
Maximum collector current (IC)	10 A	10 A
Configuration	Single	Single
Minimum DC current gain (hFE)	20	20
JESD-609 code	e0	e0
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	90 W	90 W
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	4 MHz	4 MHz

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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