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BFY405H

Description
HiRel NPN Silicon RF Transistor
CategoryDiscrete semiconductor    The transistor   
File Size423KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BFY405H Overview

HiRel NPN Silicon RF Transistor

BFY405H Parametric

Parameter NameAttribute value
MakerInfineon
package instructionDISK BUTTON, O-CRDB-F4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionEMITTER
Maximum collector current (IC)0.012 A
Collector-based maximum capacity0.9 pF
Collector-emitter maximum voltage4.5 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
highest frequency bandX BAND
JESD-30 codeO-CRDB-F4
JESD-609 codee3
Number of components1
Number of terminals4
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)22000 MHz
BFY405
HiRel
NPN Silicon RF Transistor
HiRel
Discrete and Microwave Semiconductor
For Low Current Applications
For Oscillators up to 12 GHz
Noise Figure F = 1.15 dB at 1.8 GHz
Outstanding Gms = 23dB at 1.8 GHz
Hermetically sealed microwave package
Transition Frequency
f
T = 20 GHz
SIEGET 25-Line
Infineon Technologies Grounded Emitter Transistor-
25
GHz fT-Line
Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 01
4
3
1
2
ESD: Electrostatic discharge
sensitive device,
observe handling precautions!
Type
BFY405 (ql)
(ql) Quality Level:
Marking
-
Ordering Code
see below
Pin Configuration
1
C
2
E
3
B
4
E
Micro-X
Package
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1661
on request
on request
Q62702F1710
(see order instructions for ordering example)
Semiconductor Group
1 of 5
Draft B, September 99

BFY405H Related Products

BFY405H BFY405 BFY405ES BFY405P BFY405S
Description HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor
Maker Infineon - Infineon Infineon -
package instruction DISK BUTTON, O-CRDB-F4 - DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4
Contacts 4 - 4 4 4
Reach Compliance Code compli - compli compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99
Shell connection EMITTER - EMITTER EMITTER EMITTER
Maximum collector current (IC) 0.012 A - 0.012 A 0.012 A 0.012 A
Collector-based maximum capacity 0.9 pF - 0.9 pF 0.9 pF 0.9 pF
Collector-emitter maximum voltage 4.5 V - 4.5 V 4.5 V 4.5 V
Configuration SINGLE - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 - 50 50 50
highest frequency band X BAND - X BAND X BAND X BAND
JESD-30 code O-CRDB-F4 - O-CRDB-F4 O-CRDB-F4 O-CRDB-F4
JESD-609 code e3 - e3 e3 e3
Number of components 1 - 1 1 1
Number of terminals 4 - 4 4 4
Maximum operating temperature 175 °C - 175 °C 175 °C 175 °C
Package body material CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND - ROUND ROUND ROUND
Package form DISK BUTTON - DISK BUTTON DISK BUTTON DISK BUTTON
Polarity/channel type NPN - NPN NPN NPN
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount YES - YES YES YES
Terminal surface MATTE TIN - MATTE TIN MATTE TIN MATTE TIN
Terminal form FLAT - FLAT FLAT FLAT
Terminal location RADIAL - RADIAL RADIAL RADIAL
transistor applications AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON - SILICON SILICON SILICON
Nominal transition frequency (fT) 22000 MHz - 22000 MHz 22000 MHz 22000 MHz
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