SILICON CONTROLLED RECTIFIER,200V V(DRM),8A I(T),TO-220
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | FREESCALE (NXP) |
| package instruction | , |
| Reach Compliance Code | unknown |
| Nominal circuit commutation break time | 15 µs |
| Maximum DC gate trigger current | 25 mA |
| Maximum DC gate trigger voltage | 1.5 V |
| Maximum holding current | 30 mA |
| JESD-609 code | e0 |
| Maximum leakage current | 2 mA |
| On-state non-repetitive peak current | 80 A |
| Maximum on-state voltage | 1.8 V |
| Maximum on-state current | 8000 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Off-state repetitive peak voltage | 200 V |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Trigger device type | SCR |
| MCR218-4FP | |
|---|---|
| Description | SILICON CONTROLLED RECTIFIER,200V V(DRM),8A I(T),TO-220 |
| Is it Rohs certified? | incompatible |
| Maker | FREESCALE (NXP) |
| Reach Compliance Code | unknown |
| Nominal circuit commutation break time | 15 µs |
| Maximum DC gate trigger current | 25 mA |
| Maximum DC gate trigger voltage | 1.5 V |
| Maximum holding current | 30 mA |
| JESD-609 code | e0 |
| Maximum leakage current | 2 mA |
| On-state non-repetitive peak current | 80 A |
| Maximum on-state voltage | 1.8 V |
| Maximum on-state current | 8000 A |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -40 °C |
| Off-state repetitive peak voltage | 200 V |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Trigger device type | SCR |