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BFY50

Description
NPN medium power transistors
CategoryDiscrete semiconductor    The transistor   
File Size52KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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NPN medium power transistors

BFY50 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)30
JESD-609 codee0
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.8 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)60 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFY50; BFY51; BFY52
NPN medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 22

BFY50 Related Products

BFY50 BFY51 BFY52
Description NPN medium power transistors NPN medium power transistors ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
Is it Rohs certified? incompatible incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow
Maximum collector current (IC) 1 A 1 A 1 A
Configuration Single Single Single
Minimum DC current gain (hFE) 30 40 60
JESD-609 code e0 e0 e0
Maximum operating temperature 175 °C 175 °C 175 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.8 W 0.8 W 0.8 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 60 MHz 50 MHz 50 MHz
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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