BFY50
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
MEDIUM POWER AMPLIFIERS
NPN SILICON PLANAR
TRANSISTOR
Description
4.19 (0.165)
4.95 (0.195)
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
The BFY50 is a Silicon Planar Epitaxial NPN
Transistor in Jedec TO39 metal case. they
are intended for general purpose linear and
switching applications
5.08 (0.200)
typ.
2
1
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
45˚
TO39 PACKAGE
Underside View
Pin 1 = Emitter
Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
TOT
T
stg,
T
j
R
j-case
R
j-amb
Collector
–
Base Voltage
Collector
–
Emitter Voltage
Emitter
–
Base Voltage
Collector Current
Collector Peak Current
Total Power Dissipation @ T
amb
£
25°C
@ T
case
£
25°C
Storage and Operatuing Junction Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
80V
35V
6V
1A
1.5A
0.8W
5W
–65 to 200°C
35°C / W
218°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim.02/00
BFY50
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
(BR)CBO*
V
(BR)CEO*
V
(BR)EBO*
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Test Conditions
I
C
= 100
m
A
I
C
= 100mA
V
CB
= 60V
V
EB
= 5V
I
C
= 150mA
I
C
= 1A
I
C
= 150mA
I
C
= 1A
I
C
= 10mA
I
C
= 150mA
I
C
= 1mA
I
E
= 0
I
B
= 0
I
E
= 100
m
A
I
E
= 0
T
C
= 100°C
I
C
= 0
T
C
= 100°C
I
E
= 15mA
I
B
= 0.1A
I
B
= 15mA
I
B
= 0.1A
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
Min.
80
35
6
Typ.
Max. Unit
V
50
2.5
50
2.5
nA
m
Collector – Emitter Breakdown Voltage I
C
= 30mA
A
A
nA
m
0.14
0.7
0.95
1.5
20
30
15
40
55
30
0.2
1
1.3
2
V
V
h
FE*
DC Current Gain
—
DYNAMIC CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
h
fe
h
ie
h
rE
hoe
Test Conditions
V
CE
= 6V
V
CE
= 6V
V
CE
= 5V
V
CE
= 5V
V
CE
= 5V
V
CB
= 5V
V
CE
= 10V
I
B1
= 15mA
I
C
= 1mA
I
C
= 10mA
I
C
= 10mA
I
C
= 10mA
I
C
= 10mA
I
E
= 10mA
I
C
= 50mA
V
BE
= -2V
f = 1kHz
f = 1KHz
f = 1.KHz
f = 1.KHz
f = 1.KHz
f = 1.KHz
Min.
Typ.
25
45
180
Max. Unit
—
W
Small Signal Current Gain
Imput Impedance
Reverse Voltage Ratio
Output Admittance
Collector -Base Capacitance
Transistion Frequency
Delay Time
Rise Time
Storage Time
Fall Time
55 x10
.6
30
10
60
100
15
40
300
60
—
m
S
C
cbo
f
T
t
d
t
r
t
s
t
f
pF
MHz
I
C
= 150mA V
CC
= 10V
I
C
= 150mA V
CC
= 10V
I
B1
= -I
B2
= 15mA
ns
Pulse
Duration
= 300
m
s, Duty Cycle = 1%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim.02/00
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