5962R9674201TEC datasheet, PDF

Datasheet> All Categories > Analog mixed-signal IC> The signal circuit> 5962R9674201TEC

5962R9674201TEC: Description8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16, CERAMIC, DIP-16; CategoryAnalog mixed-signal IC The signal circuit; File Size235KB，29 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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5962R9674201TEC Overview

8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16, CERAMIC, DIP-16

5962R9674201TEC Parametric

Parameter Name	Attribute value
Maker	Intersil ( Renesas )
Parts packaging code	DIP
package instruction	DIP, DIP16,.3
Contacts	16
Reach Compliance Code	unknown
Analog Integrated Circuits - Other Types	SINGLE-ENDED MULTIPLEXER
JESD-30 code	R-CDIP-T16
JESD-609 code	e4
Nominal Negative Supply Voltage (Vsup)	-15 V
Number of channels	8
Number of functions	1
Number of terminals	16
Nominal off-state isolation	45 dB
Maximum on-state resistance (Ron)	1800 Ω
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP16,.3
Package shape	RECTANGULAR
Package form	IN-LINE
power supply	+-15 V
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class T
Maximum seat height	5.08 mm
Maximum supply current (Isup)	2 mA
Nominal supply voltage (Vsup)	15 V
surface mount	NO
Maximum disconnect time	3000 ns
Maximum connection time	3000 ns
switch	BREAK-BEFORE-MAKE
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
total dose	100k Rad(Si) V
width	7.62 mm

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REVISIONS

LTR

DESCRIPTION

Changes in accordance with NOR 5962-R104-98. - rrp

Add class T requirements. Update boilerplate. Redrawn. - rrp

Made changes to 1.5 and added new RHA designator P in table I. - rrp

Add device type 02. Make changes to 1.2.2, 1.5, table I, figure 1, and

appendix A. - ro

Made changes to figure 3. -rrp

DATE (YR-MO-DA)

98-05-11

98-12-09

99-04-19

99-11-24

00-01-03

APPROVED

R. MONNIN

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

PMIC N/A

REV

SHEET

PREPARED BY

SANDRA ROONEY

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

CHECKED BY

SANDRA ROONEY

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216

APPROVED BY

MICHAEL A. FRYE

MICROCIRCUIT, LINEAR, RADIATION

HARDENED, CMOS, MULTIPLEXER WITH

OVERVOLTAGE PROTECTION, MONOLITHIC

SILICON

SIZE

SHEET

CAGE CODE

DRAWING APPROVAL DATE

96-01-10

AMSC N/A

REVISION LEVEL

67268

1 OF

5962-96742

DSCC FORM 2233

APR 97

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

5962-E094-00

1.3 Absolute maximum ratings. 1/

Supply voltage between +V and -V ............................................................................ 40 V

Supply voltage between +V and ground..................................................................... +20 V

Supply voltage between -V and ground...................................................................... -20 V

Digital input overvoltage:

, +V

............................................................................................................. +V

SUPPLY

+ 4 V

-V

, -V

.............................................................................................................. -V

SUPPLY

- 4 V

Analog input overvoltage:

........................................................................................................................ +V

SUPPLY

+20 V

-V

........................................................................................................................ -V

SUPPLY

-20 V

Peak current, S or D (pulsed at 1 ms, 10 percent duty cycle max)............................. 40 mA

Storage temperature range ........................................................................................ -65

C to +150

Maximum package power dissipation at T

= +125

C (P

): 2/

Case outline E......................................................................................................... 0.67 W

Case outline X......................................................................................................... 0.59 W

Thermal resistance, junction-to-case (

Case outline E......................................................................................................... 12

C/W

Case outline X......................................................................................................... 25

C/W

Thermal resistance, junction-to-ambient (

Case outline E......................................................................................................... 75

C/W

Case outline X......................................................................................................... 85

C/W

Lead temperature (soldering, 10 seconds)................................................................. +275

Junction temperature (T

)........................................................................................... +175

1.4 Recommended operating conditions.

Operating supply voltage (

SUPPLY

)........................................................................

15 V

Logic low level (V

)................................................................................................... +0.8 V

Logic high level (V

)................................................................................................. +4.0 V

Ambient operating temperature range (T

) ................................................................ -55

C to +125

1.5 Radiation features

SEP effective let no upset:

Device type 01 ........................................................................................................ 110 MEV/(cm / mg) 3/

Device type 02 ........................................................................................................ TBD

Maximum total dose available (dose rate = 50 – 300 rads(Si)/s)

Device classes Q and V:

Device type 01 ................................................................................................... 100 Krad (Si)

Device type 02 ................................................................................................... 300 Krad (Si)

Device type class T:

Device type 01 and 02 ....................................................................................... 100 Krad (Si)

Dose rate upset (20 ns pulse):

Device type 01 ........................................................................................................ >1 x 10 Rad(Si)/s

Device type 02 ........................................................................................................ Not tested

Latch-up...................................................................................................................... None 3/

Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability.

If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on

) at the following rates:

Case outline E.............................................................................13.3 mW/

Case outline X.............................................................................11.76 mW/

Guaranteed by process or design, not tested.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96742

SHEET

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a

part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in

the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the

solicitation.

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

STANDARDS

DEPARTMENT OF DEFENSE

MIL-STD-883 -

MIL-STD-973 -

MIL-STD-1835 -

HANDBOOKS

DEPARTMENT OF DEFENSE

MIL-HDBK-103 -

MIL-HDBK-780 -

List of Standard Microcircuit Drawings (SMD's).

Standard Microcircuit Drawings.

Test Method Standard Microcircuits.

Configuration Management.

Interface Standard For Microcircuit Case Outlines.

(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A, as specified herein.

3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein.

3.2.2 Terminal connection(s). The terminal connection(s) shall be as specified on figure 1.

3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 2.

3.2.4 Timing diagram(s). The timing diagram(s) shall be as specified on figure 3.

3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as specified in table III.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96742

SHEET

3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full

ambient operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

tests for each subgroup are defined in table I.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space

limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the

RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535.

Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as

required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix

3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a

QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a

certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-

HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of

supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q, T and V, the requirements of

MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or

for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2

herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.

3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain

the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made

available onshore at the option of the reviewer.

3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

microcircuit group number 82 (see MIL-PRF-38535, appendix A).

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96742

SHEET

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