HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
, High dv/dt
Preliminary Data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
TO-264
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
IXFH20N80Q
IXFK20N80Q
IXFT20N80Q
V
DSS
= 800 V
I
D25
=
20 A
R
DS(on)
= 0.42
Ω
t
rr
≤
250 ns
Maximum Ratings
800
800
±20
±30
20
80
20
45
1.5
5
360
-55 ... +150
150
-55 ... +150
300
TO-247
TO-264
V
V
V
V
A
A
A
mJ
J
V/ns
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
TO-264 AA (IXFK)
W
°C
°C
°C
°C
G = Gate
S = Source
G
D
S
D (TAB)
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6
4
10
g
g
g
TAB = Drain
Features
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
800
2.5
4.5
±200
T
J
= 25°C
T
J
= 125°C
25
1
0.42
V
V
nA
µA
mA
Ω
IXYS advanced low
Q
g
process
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low R
DS (on)
low Q
g
Avalanche energy and current rated
Fast intrinsic rectifier
Advantages
Easy to mount
Space savings
High power density
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2002 IXYS All rights reserved
DS98616A(12/02)
IXFH20N80Q IXFK20N80Q
IXFT20N80Q
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
11
19
5100
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
500
170
28
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1.5
Ω
(External),
27
74
14
150 200
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
34
80
0.35
TO-247
TO-264
0.25
0.15
S
1
2
3
TO-247 AD (IXFH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
K/W
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min.
Max.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
3.55
5.89
4.32
6.15
5.3
2.54
2.6
1.4
2.13
3.12
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Inches
Min.
Max.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205
.780
.140
0.232
.170
242
.209
.102
.098
.055
.084
.123
.031
.845
.640
0.225
.800
.177
.144
0.252
.216
BSC
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ. max.
20
80
1.5
250
A
A
V
ns
µC
A
TO-264 AA Outline
Repetitive; pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle
d
≤
2 %
I
F
= I
S
-di/dt = 100 A/µs, V
R
= 100 V
1
9
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
TO-268 Outline
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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