P010xx
Sensitive standard SCRs up to 0.8 A
Features
■
■
■
A
I
T(RMS)
up to 0.8 A
V
DRM
/V
RRM
100, 200, 400 and 600 V
I
GT
from 5 to 200 µA
K
G
K
A
KA
G
Description
Thanks to highly sensitive triggering levels, the
P010xx SCR series is suitable for all applications
where available gate current is limited, such as
ground fault circuit interruptors, pilot circuits in
solid state relays, stand-by mode power supplies,
smoke and alarm detectors.
Available in through-hole or surface mount
packages, the voltage capability of this series has
been upgraded since its introduction and is now
available up to 600 V.
Table 1.
Device summary
Voltage
Order code
100 V
P0102AA 1AA3
P0102AA 5AL3
P0102AL 5AA4
P0102BA 1AA3
P0102BL 5AA4
P0102DA 1AA3
P0102DA 2AL3
P0102DA 5AL3
P0102DN 5AA4
P0102MA 1AA3
P0102MN 5AA4
P0109AL 5AA4
P0109DA 1AA3
P0109DA 5AL3
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
200 V
400 V
600 V
G
A
TO-92
(P010xxA)
SOT-223
(P0102xN)
A
G
K
SOT23-3L
(P010xxL)
Sensitivity
200 µA
200 µA
200 µA
200 µA
200 µA
200 µA
200 µA
200 µA
200 µA
200 µA
200 µA
1 µA
1 µA
1 µA
Package
TO-92
TO-92
SOT23-3L
TO-92
SOT23-3L
TO-92
TO-92
TO-92
SOT-223
TO-92
SOT-223
SOT23-3L
TO-92
TO-92
Packing
Mode
Bulk
Tape and reel 13 inch
Tape and reel 7 inch
Bulk
Tape and reel 7 inch
Bulk
Ammopack
Tape and reel 13 inch
Tape and reel 7 inch
Bulk
Tape and reel 7 inch
Tape and reel 7 inch
Bulk
Tape and reel 13 inch
November 2008
Rev 1
1/11
www.st.com
11
Characteristics
P010xx
1
Table 2.
Symbol
I
T(RMS)
Characteristics
Absolute ratings (limiting values) P010xxA and P010xxN
Parameter
TO-92
RMS on-state current (180° conduction angle)
SOT-223
TO-92
IT
(AV)
Average on-state current (180° conduction angle)
SOT-223
Non repetitive surge peak on-state current
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
F = 60 Hz
t
p
= 20 µs
T
l
= 55 °C
T
amb
= 70 °C
T
l
= 55 °C
T
amb
= 70 °C
8
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
A
7
0.24
50
1
0.1
- 40 to + 150
- 40 to + 125
A
2
S
A/µs
A
W
°C
0.5
A
Value
0.8
Unit
A
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
Table 3.
Symbol
I
T(RMS)
IT
(AV)
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
Absolute ratings (limiting values) P010xxL
Parameter
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
F = 60 Hz
t
p
= 20 µs
T
amb
= 36 °C
T
amb
= 36 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
Value
0.25
0.16
7
A
6
0.18
50
0.5
0.02
- 40 to + 150
- 40 to + 125
A
2
S
A/µs
A
W
°C
Unit
A
A
2/11
P010xx
Table 4.
Symbol
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
V
D
= V
DRM
R
L
= 3.3 kΩ R
GK
= 1 kΩ
I
RG
= 10 µA
I
T
= 50 mA
I
G
= 1 mA
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
Characteristics
Electrical characteristics
(1)
P010xxA and P010xxN
Test conditions
Min.
V
D
= 12 V
R
L
= 140
Ω
Max.
Max.
Min.
Min.
Max.
Max.
Min.
Max.
Max.
Max.
Value
-
µA
200
0.8
0.1
8
5
6
75
1.95
0.95
600
1
Max.
10
100
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
Unit
V
D
= 67 % V
DRM
I
TM
= 1.6 A
tp = 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
= 400 V
V
DRM
= V
RRM
= 600 V
V
DRM
= V
RRM
1. T
j
= 25 °C, unless otherwise specified
Table 5.
Symbol
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
Electrical characteristics
(1)
P010xxL
Test conditions
V
D
= 12 V
R
L
= 140
Ω
T
j
= 125 °C
Max.
Max.
Min.
Min.
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
Max.
Max.
Min.
Max.
Max.
Max.
Max.
100
200
1.7
1.0
1000
1
µA
P0102xL
200
0.8
0.1
8
6
7
100
P0109AL
1
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
V
D
= V
DRM
R
L
= 3.3 kΩ R
GK
= 1 kΩ
I
RG
= 10 µA
I
T
= 50 mA
I
G
= 1 mA
V
D
= 67 % V
DRM
I
TM
= 0.4 A
tp = 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
1. T
j
= 25 °C, unless otherwise specified
3/11
Characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-t)
R
th(j-a)
R
th(j-a)
Junction to case (DC)
Junction to tab (DC)
Junction to ambient (DC)
P010xx
Thermal resistance
Parameter
TO-92
SOT-223
TO-92
S
(1)
= 5 cm
2
SOT-223
Maximum
80
30
150
°C/W
60
400
°C/W
Unit
°C/W
°C/W
Junction to ambient (mounted on FR4 with recommended pad layout) SOT23-3L
1. S = Copper surface under tab.
Figure 1.
Maximum average power
dissipation vs. average on-state
current P010xxA and P010xxN
Figure 2.
Maximum average power
dissipation vs. average on-state
current P010xxL
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.1
0.2
0.3
0.4
360°
α
= 180°
P(W)
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.6
α
= 180°
360°
I
T(AV)
(A)
α
0.5
I
T(AV)
(A)
0.00
0.02
0.04
0.06
0.08
0.10
0.12
α
0.14
0.16
0.18
Figure 3.
Average and DC on-state current
vs. lead temperature
P010xxA and P010xxN
Figure 4.
Average and DC on-state current
vs. ambient temperature P010xxA
and P010xxN
I
T(AV)
(A)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
α
= 180°
(TO-92)
α
= 180°
(SOT-223)
D.C.
(TO-92)
D.C.
(SOT-223)
I
T(AV)
(A)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
α
= 180°
(TO-92)
D.C.
(TO-92)
α
= 180°
(SOT-223)
D.C.
(SOT-223)
Device mounted on
FR4 with recomended
pad layout for SOT-223
T
lead
(°C)
T
amb
(°C)
75
100
125
4/11
P010xx
Characteristics
Figure 5.
Average and DC on-state current
vs. case temperature P010xxL
Figure 6.
Relative variation of thermal
impedance junction to ambient
vs. pulse duration
I
T(AV)
(A)
0.30
0.25
D.C.
K=[Z
th(j-a)
/R
th(j-a)
]
1.00
0.20
0.15
0.10
0.05
SOT23-3L
α
= 180°
TO-92
0.10
SOT-223
T
case
(°C)
0.00
0
25
50
75
100
125
0.01
1E-2
1E-1
t
p
(s)
1E+0
1E+1
1E+2
5E+2
Figure 7.
Relative variation of gate trigger,
holding, and latching currents
vs. junction temperature
Figure 8.
Relative variation of holding
current vs. gate-cathode resistance
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
6
I
H
[R
GK
] / I
H
[R
GK
=1k
Ω
]
20
T
j
= 25°C
Typical values
5
4
3
I
GT
18
16
14
12
10
8
6
Typical values
2
1
0
-40
-20
0
20
40
60
80
100
120
140
0
1E-2
1E-1
I
H
& I
L
R
GK
= 1k
Ω
4
T
j
(°C)
2
R
GK
(k
Ω
)
1E+0
1E+1
Figure 9.
Relative variation of dV/dt immunity Figure 10. Relative variation of dV/dt immunity
vs. gate-cathode resistance
vs. gate-cathode capacitance
dV/dt[C
GK
] / dV/dt[
R
GK
=1k
Ω
]
10
T
j
= 125°C
V
D
= 0.67 x V
DRM
dV/dt[R
GK
] / dV/dt[R
GK
=1k
Ω
]
10.0
V
D
= 0.67 x V
DRM
T
j
= 125°C
R
GK
= 1k
Ω
8
Typical values
1.0
6
4
Typical values
2
0.1
0
0.2
0.4
0.6
0.8
R
GK
(k
Ω
)
0
1.0
1.2
1.4
1.6
1.8
2.0
C
GK
(nF)
0
1
2
3
4
5
6
7
5/11
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