NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
D
P0903BI
TO-251
Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
25
R
DS(ON)
9.5mΩ
I
D
50A
3
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy
2
Power Dissipation
L = 0.1mH
L = 0.05mH
T
C
= 25 °C
T
C
= 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (
1
/
16
” from case for 10 sec.)
T
j
, T
stg
T
L
1
SYMBOL
V
GS
1 2
LIMITS
±20
50
35
UNITS
V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
I
AR
E
AS
E
AR
P
D
A
200
40
250
8.6
50
30
-55 to 150
275
°C
W
mJ
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1
2
SYMBOL
R
θJC
R
θJA
R
θCS
TYPICAL
MAXIMUM
2.5
62.5
UNITS
°C / W
0.6
Pulse width limited by maximum junction temperature.
Duty cycle
≤
1％
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 0V, V
GS
= ±20V
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
C
= 125 °C
25
1
1.6
3
±250
25
250
nA
µA
V
LIMITS
UNIT
MIN TYP MAX
1
Mar-07-2005
NIKO-SEM
On-State Drain Current
1
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BI
TO-251
Lead-Free
50
11
7.5
32
16
9.5
S
A
mΩ
I
D(ON)
R
DS(ON)
g
fs
V
DS
= 10V, V
GS
= 10V
V
GS
= 4.5V, I
D
= 20A
V
GS
= 10V, I
D
= 25A
Drain-Source On-State Resistance
1
Forward Transconductance
1
V
DS
= 10V, I
D
= 25A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
Fall Time
2
2
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
V
DS
= 15V, R
L
= 1Ω
I
D
≅
50A, V
GS
= 10V, R
GEN
= 24Ω
V
DS
= 10V, V
GS
= 10V,
I
D
= 25A
V
GS
= 0V, V
DS
= 15V, f = 1MHz
1200
600
350
25
15
10
6
120
40
105
1800
1000
500
50
nC
pF
16
250
90
200
nS
Continuous Current
Pulsed Current
3
Forward Voltage
1
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
1
2
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= I
S
, dl
F
/dt = 100A /
µS
I
S
= 25A, V
GS
= 0V
0.9
70
200
0.043
50
150
1.3
A
V
nS
A
µC
Pulse test : Pulse Width
≤
300
µsec,
Duty Cycle
≤
2％.
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P0903BI”, DATE CODE or LOT #
2
Mar-07-2005
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BI
TO-251
Lead-Free
TYPICAL CHARACTERISTICS
3
Mar-07-2005
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BI
TO-251
Lead-Free
4
Mar-07-2005
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BI
TO-251
Lead-Free
TO-251 (IPAK) MECHANICAL DATA
mm
Dimension
Min.
A
B
C
D
E
F
G
13.7
2.2
0.4
0.4
0.9
7.0
5.4
Typ.
Max.
15.3
2.4
0.6
0.6
1.5
8.0
5.8
H
I
J
K
L
M
N
Dimension
Min.
1.4
6.4
5.2
0.6
0.4
2.3
Typ.
Max.
2
6.8
5.5
0.9
0.8
mm
A
B
D
C
H
G
F
3
1
K
L
M
2
J
I
E
5
Mar-07-2005
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